Manufacturing of semiconductor device

Abstract

Abstract PURPOSE: To make source diffusion hole and gate diffusion hole patterns fine and uniform, by operating on a flat wafer all processes required for accurate patternings. CONSTITUTION: Buffer oxide film 12 and Si 3 N 4 film 13, which is No.1 insulating film, are laminated on n-type epitaxial wafer 11, and by etching this, a pattern consisting of film 12 and films 13aW13b is formed. Next, by operating heat treatment in wet oxygen, the exposed surface of wafer 11 is changed into oxide film 17. The entire surface, including thin film 17' on films 13aW13b produced at this time, is coated with Si 3 N 4 film, which becomes No.2 insulating film. Subsequently, film 18 is plasma-etched, and by using this as mask and operating heat treatment in steam, field oxide film 14 is produced. Then, film 18 is removed by using phosphoric acid having slow etching speed, and by using film 17' as stopper, films 13aW 13b are retained. In this way, the desired diffusion hole is formed. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hisao Kamo
• 👤 Yuji Oda

Bibliographic Details