Semiconductor memory storage

Abstract

Abstract PURPOSE:To obtain a memory, speed thereof is increased, by mounting the wiring of a metal, electric resistance thereof is far small, or its silicide onto a semiconductor layer (made of a substance such as poly Si), connecting a wiring to the semiconductor layer and using it as a word wire. CONSTITUTION:A field oxide film 2 and a gate oxide film 19 are formed onto a P type Si substrate, electrodes for capacitance by P added poly Si 7 are shaped selectively, the surface is coated with a thermal oxide film 20, P added poly Si 8, 9 is formed, one part of a word wire is shaped, ahd the surfaces are coated with a thermal oxide film 20. N<+> sources 4 and drains are molded through the implantation of P ions, the surface is coated with PSG 12, a window 13 is formed at a predetermined position, and overlapped onto the poly Si 8, 9, and Al wiring 10, 11 is shaped, and connected to the layers 8, 9. The surface is coated with PSG 15, a window 16 is formed, and an Al data wire 17 and the wiring of the peripheral circuit are shaped. Accordingly, the electric resistance of the word wire is reduced, and the memory, speed thereof is increased, is obtained.

Inventors

• 👤 Takeshi Kizaki
• 👤 木崎　健
• 👤 Hajime Iijima
• 👤 肇 飯島

Bibliographic Details