Semiconductor device

Abstract

Abstract PURPOSE:To shorten access time, by operating both a bit line and a word line at high speed wherein said both lines are constituted by metal with low specific resistance, such as, aluminum, etc. CONSTITUTION:The second layer insulating film 11 and metallic wiring 12 with low specific resistance, such as, aluminum, etc. are mounted. That is, wiring 10 used as a bit line is formed, the insulating film 11, such as, a silicon oxide film, etc. is again made up, contact holes are built up to insulating films 9, 11 and a word line consisting of metal 12 with low specific resistance, such as, aluminum, etc. is formed so as to contact with a gate electrode 7a.

Inventors

• 👤 Yasuharu Nagayama
• 👤 Kazuhiro Shimotori
• 👤 Hideyuki Ozaki

Bibliographic Details