Semiconductor laser element

Abstract

Abstract PURPOSE:To improve the reliability and to suppress the noise characteristics of the titled laser element an also to enable to put the laser element into practical use by a method wherein, in regard to a Ga1-xAlxAs double hetero junction type semiconductor element, Mg is added to the active layer which oscillates a laser beam of visual range. CONSTITUTION:A P type clad layer 3 whereon Mg of 10<18>cm<-3> was doped, a 5X10<17>cm<-3>Mg doped P type active layer 4, a 10<18>cm<-3>Te doped N type clad layer 5 and a 10<18>cm<-3>Te doped N type cap layer 6 are successively laminated using a continued liquid-phase epitaxial growing method. A current circuit 7, where a concentrated current runs, is provided at the V-shaped groove where a current limiting layer 2 was removed. A P side electrode 8 and an N side electrode 9 are formed by evaporation on a GaAs substrate 1 and the cap layer 6 respectively. As a layer 3 is formed thin on the area excluding the V-shaped groove and it is thickly formed at the V-shaped groove, the oscillating beam of light is oozed out to the layer 2 through the layer 3 on the part other than the V-shaped groove. Accordingly the lateral mode, for which practically effective refractive index difference is established in the lateral direction of the layer 4, can be stabilized.

Inventors

• 👤 Toshiro Hayakawa
• 👤 利郎 早川
• 👤 Nobuyuki Miyauchi
• 👤 宮内　伸幸

Bibliographic Details