JPS5348669A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Growth method of semiconductor crystal
Assignee: Mitsubishi Electric Corp
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Filing: 1976-10-15
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Granted: —
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Expires: 1996-10-15
Abstract
Abstract PURPOSE: To produce a semiconductor crystal of high purity similar to the one when there is least O 2 in atmosphere gas by adding a solute of oxidizing power stronger than that of a solvent into a solution in performing epitaxial growth. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hirobumi Suga
- 👤 Jun Ishii
- 👤 Wataru Suzaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 22:58
CPC Classifications
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