Manufacture of photoelectric converting semiconductor device

Abstract

Abstract PURPOSE:To stop the removal of a crushing layer by chemicals, etc. and improve characteristics by a method wherein grooves in extents that do not reach a p-n junction from the back of a wafer are formed and separated into pellets. CONSTITUTION:A p-n junction is made up to a GaP substrate 8, an n-layer is polished as a mirror surface, and p-type electrodes 3 and n-type electrodes 4 are formed. The n-type electrodes 4 can be made sure from a p-type layer of the surface under this condition. The back is cut in depth shallower than the p-n junction 2 while conforming to the cutting pitches of the electrodes 3 from the n-layer of the back. According to this method, a crushing layer 5 is not formed at the p-n junction 2 of pellets and the area of the p-n junction is not decreased. Consequently, optical output is improved as compared to conventional devices, voltage drop in the forward direction is also reduced, and the removal of the erushing layer by chemicals is not required, thus resulting in high reliability.

Inventors

• 👤 Masao Kobayashi

Bibliographic Details