Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To avoid the characteristic change of a semiconductor member by employing no adhesive but interposing a conductive metal molten layer when bonding an electrode formed on the member on a substrate and equalizing the thickness of the adhesive layer. CONSTITUTION:When forming a Hall device or the like, a semiconductor plate 8 is formed in a square shape, and there are formed a magnetic sensitive portion 9 at the center, and input electrodes 10, 11 and output electrodes 12, 13 on the periphery. When these electrodes are bonded on a square substrate 1 made of ferrite or silicon or the like, an insulating layer 2 made of SiO2 or the like is covered on the substrate 1, and low melting point metallic layers 3-6 of In, Sn, Pb, etc. are covered thereon while isolating it with isolating portions 7 and air gas portion 14. Thereafter, the plate 8 is placed on the substrate 1 while coinciding with the diagonal line of the substrate 1 at one side, the metallic layer is molten, and the substrate 1 is secured with the electrodes. Thus, the characteristic change of the semiconductor member due to the difference of thermal expansion coefficients can be reduced.

Inventors

• 👤 Noboru Masuda

Bibliographic Details