JPS5561024A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of manufacturing electric contact of semiconductor element
Assignee: BBC BROWN BOVERI and CIE
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Filing: 1979-10-29
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Granted: —
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Expires: 1999-10-29
Abstract
Abstract A process for the manufacture of electrical contacts on semiconductor components, wherein a metallic layer is placed upon the surface of the semiconductor component with which contact is to be made, which layer is then sintered by heating to a predetermined temperature, characterized by the fact that the heating done for sintering purposes takes place by means of irradiation with laser light directed only upon the metallic layer, the intensity of the laser light being sufficient to bring the metallic layer and the semiconductor material to the melting point.
Inventors
- 👤 Fuon Arumen Maruchin
- 👤 Buitomaa Maruku
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 16:21
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W72/00; H10W72/30; H10W72/01; H10W72/019; H10W72/01961; H10W72/071; H10W72/072; H10W72/07231; H10W72/073; H10W72/07331; H10W72/07335; H10W72/07336; H10W72/351; H10W72/352; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
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References Cited (Backward Citations)
JPS52146559A
Cited
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