Semiconductor laser device

Abstract

Abstract PURPOSE:To reduce the density of light on laser end faces and heighten the density of radiation recombination carriers, by providing gradient portions which extend from the interior of a laser activation region to the end faces and perpendicularly intersect an optical axis. CONSTITUTION:A light resonator 2 is interposed between light enclosing layers 5, 6 and a striped portion 10' parallel with an optical axis I is provided on the surface of the layer 6 so that a laser device 1 is constituted. The layer 5 comprises an N-type semiconductor substrate 7 and a lead electrode 8. The other layer 6 comprises a P-type semiconductor layer 9, a PN inverse bias junction layer 11 and a lead electrode 10. The light resonator 2 is made of a hetero junction which is provided by interposing a carrier radiation recombination layer 21 between an upper and a lower light paths 22, 23. The light resonator 2 does not extend in parallel with the light enclosing layers 5, 6. Gradient portions 22f, 23f extending toward the electrodes 8, 10 are provided in the light paths 22, 23 at a coupling layer portion 21f located at the end of a coupling layer 21.

Inventors

• 👤 Yunosuke Makita

Bibliographic Details