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JPS5333080A Expired / Lapsed JP ⏱️ 0.0 years remaining

Light emitting semiconductor device and its production

Assignee: NTT Inc
•
Filing: 1976-09-08
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Granted: —
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Expires: 1996-09-08
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Abstract

Abstract PURPOSE:To increase external efficiency by making the thickness of the active layer at the end face for radiating laser thicker than the thickness at the end face on the opposite side.

Inventors

  • 👤 Takashi Fukui
  • 👤 Takeshi Kobayashi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 14:19
CPC Classifications
—

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References Cited (Backward Citations)

JPS5299792A Cited

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