Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain the highly accurate electrode wiring in the semiconductor device by superimposing a resist mask of small pore on a resist mask of large pore, evaporating metallic film thereon, and then removing the masks therefrom. CONSTITUTION:The first positive resist 2 is formed on a semiconductor substrate 1 to form an exposure portion 5. A positive resist 2' is further superimposed to form a smaller exposure portion 5'. When it is developed, an electrode opening 3 having an overhang is formed. When a metallic film 4 is formed and the resist is removed, a miniature electrode pattern 6 is obtained thereon. This configuration can easily form an overhanglike resist pattern and can easily lift off it. Accordingly, it can obtain highly accurate electrode pattern in one development with preferable reproducibility.

Inventors

• 👤 Yoshihiro Todokoro

Bibliographic Details