Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To obtain a semiconductor IC forming an extremely miniaturized monolithic microwave IC by forming dielectric having a dielectric constant larger than that of a semiconductor substance on the substrate and forming a coplanar line on the dielectric. CONSTITUTION:The dielectric 2 having a dielectric constant larger than that of the semiconductor substrate 1 is formed on the substrate 1 and a microwave circuit consisting of the coplanar line (a signal line 2 and a ground line 4) is formed on the dielectric 2. Since the dielectric having the large dielectric constant is used, electric wavelength on the dielectric 2 is shortened and the length of the microwave circuit constituted of the coplanar line is shortened, the chip size can be sharply reduced. When the dielectric with about 70 to 100 dielectric constant e.g. is used, the area of the chip is contracted to <=1/10 the ordinary area.

Inventors

• 👤 Kunihiko Kanazawa
• 👤 邦彦 金澤
• 👤 Masahiro Hagio
• 👤 萩尾　正博

Bibliographic Details