Passivation structure in semiconductor device

Abstract

Abstract PURPOSE:To prevent fluctuation of resistance by accumulating a silicon layer in contact with a protection insulation layer covering the substrate surface where a semiconductor circuit including a polycrystal silicon film resistance element is formed. CONSTITUTION:An interlayer insulation layer 2 is formed on a semiconductor substrate 1 and a resistance element 3 consisting of polycrystal silicon film is formed on the interlayer insulation layer 2. A protection insulation layer 5 is formed on the resistance element 3 and a nitriding silicon film 6 for passivation is formed on the entire surface of the insulation layer 5. A polycrystal silicon layer 10 is provided between the resistance element 3 and the nitriding silicon film 6, thus shutting off hydrogen which permeates the insulation layer 5 from the nitriding silicon film 6 in the heat treating process and is trapped by a polycrystal silicon film resistance element. No hydrogen is trapped by the polycrystal silicon film, thus preventing resistance of resistance element from fluctuating.

Inventors

• 👤 Fumitake Mieno
• 👤 文健 三重野

Bibliographic Details