Semiconductor device

Abstract

Abstract PURPOSE:To intensively adhere the protection film part to prevent penetration of water, etc. and exfoliation by forming a polysilicon film on the upper surface including aluminum wiring, forming thereon a protection film continuously and bonding polysilicon film to the aluminum wiring through sintering reaction. CONSTITUTION:A semiconductor substrate 1 is set into a reaction pipe, SiH4 is supplied as the raw material gas to the carrier gas and a polysilicon film 4 is formed to the oxide film 2 and aluminum wirings 31-36. In succession, SiH4 and O2 or NH3 are reacted and thereby the SiO2 film and Si3N4 film are formed as the protection film 5 under the condition that there is no continuous interface. As a result, the polysilicon film 4 and a protection film 5 are integrated. When, the semiconductor device thus formed is subjected to the heat processing at a temperature as not fusing the aluminum wiring, the polysilicon film 4 and the aluminum wiring generate sintering reaction and the interface of them is bonded by reaction. Accordingly, the polysilicon film 4 integrated to the protection film 5 is intensively bonded with the aluminum wiring.

Inventors

• 👤 Masayoshi Kitamura
• 👤 北村　昌良

Bibliographic Details