Patent EP0776037A2 successfully refreshed from Google Patents.
EP0776037A2
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EP
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Low temperature integrated metallization process and apparatus
Assignee: Applied Materials Inc
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Filing: 1996-10-22
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Granted: —
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Expires: 2016-10-22
Abstract
Abstract The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer (16) is deposited onto a substrate having high aspect ratio contacts or vias (14) formed thereon. A CVD metal layer (22) is then deposited onto the refractory layer (16) at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal (23) is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer (24) is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.
Inventors
- 👤 Roderick Craig Mosely
- 👤 Hong Zhang
- 👤 Fusen Chen
- 👤 Ted Guo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 17:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/568; C23C16/00; C23C16/44; C23C16/54; H10P; H10P14/00; H10P14/40; H10P14/412; H10W20/033; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
104 words
A method of forming a feature on a substrate, comprising the steps of: a) sputtering a titanium layer over the surfaces of an aperture, the titanium having a thickness of between about 5 and about 700 Angstroms; b) chemical vapor depositing aluminum over the surface of the titanium layer without capping the via, the chemical vapor deposited aluminum having a thickness greater between about 200 Angstroms and about 1 micron; c) physical vapor depositing aluminum over the chemical vapor deposited aluminum at a temperature below about 660° C to cause the CVD and PVD aluminum to flow into the via without voids forming therein.
Claim 2
Dependent Claim
20 words
The method of claim 1, wherein the titanium layer has a thickness of between about 100 and about 200 Angstroms.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein the physical vapor deposition of aluminum occurs at a temperature below about 400° C.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein the steps a through c are performed simultaneously in an integrated processing chamber.
Claim 5
Dependent Claim
34 words
The method of claim 4, wherein the physical vapor deposited aluminum comprises a dopant, the method further comprising the step of annealing at a temperature of between about 250° C and about 350° C.
Claim 6
Dependent Claim
47 words
A process for providing uniform step coverage on a substrate, comprising the steps of: a) forming a thin refractory layer on a substrate; b) forming a thin conformal CVD metal layer over the refractory layer; and c) forming a PVD metal layer over the CVD metal layer.
Claim 7
Dependent Claim
17 words
The process of claim 6 wherein the CVD metal layer has a thickness less than 1500 Angstroms.
Claim 8
Dependent Claim
17 words
The process of claim 7 wherein the refractory metal layer has a thickness less than 600 Angstroms.
Claim 9
Dependent Claim
19 words
The process of claim 6 wherein the CVD metal layer is Al and the PVD metal layer is Al.
Claim 10
Dependent Claim
18 words
The process of claim 9 wherein the PVD layer is deposited at a temperature less than 400° C.
Claim 11
Dependent Claim
17 words
The process of claim 10 wherein the CVD Al is deposited at a temperature below 400° C.
Claim 12
Dependent Claim
20 words
The process of claim 9 wherein the CVD and PVD Al layers intermix to form a single conformal metal layer.
Claim 13
Dependent Claim
134 words
A semiconductor wafer comprising: a) a metal layer formed on the semiconductor wafer; b) a dielectric layer formed on the metal layer, the dielectric layer having an aperture formed therein and communicating with the metal layer; c) a titanium layer over the surfaces of the aperture, the titanium having a thickness of between about 5 and about 700 Angstroms; d) a chemical vapor deposited aluminum layer formed over the titanium layer without capping the aperture, the chemical vapor deposited aluminum having a thickness between about 200 Angstroms and about 1 micron; e) a physical vapor deposited aluminum over the chemical vapor deposited aluminum, wherein the physical vapor deposited aluminum is deposited at a temperature below about 400° C to cause the CVD and PVD aluminum to flow into the via without voids forming therein.
Claim 14
Independent Claim
77 words
An apparatus for providing improved step coverage and metallization of a semiconductor substrate, comprising: a) a multiplicity of isolatable communicating regions including a load lock chamber, a refractory metal processing chamber, a CVD metal processing chamber, and a PVD metal processing chamber; b) an intermediate substrate transport region; and c) vacuum means communicating with the isolatable regions for establishing a vacuum gradient of decreasing pressure across the apparatus from the load lock chamber to the processing chambers.
References Cited (Backward Citations)
US5250465A
Cited
US5147819A
Cited
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