Patent EP0772242A1 successfully refreshed from Google Patents.
EP0772242A1
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Single feature size MOS technology power device
Assignee: STMicroelectronics SRL
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Filing: 1995-10-30
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Granted: —
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Expires: 2015-10-30
Abstract
Abstract A MOS technology power device comprises: a semiconductor material layer (2) of a first conductivity type; a conductive insulated gate layer (7,8,9) covering the semiconductor material layer (2); a plurality of elementary functional units, each elementary functional unit comprising a body region (3) of a second conductivity type formed in the semiconductor material layer (2), the body region (3) having the form of an elongated body stripe, each elementary functional unit further comprising an elongated window (12) in the insulated gate layer (7,8,9) extending above the elongated body stripe (3). Each body stripe (3) includes at least one source portion (60;61;62) doped with dopants of the first conductivity type, intercalated with a body portion (40;41;3') of the body stripe (3) wherein no dopant of the first conductivity type are provided. The conductive insulated gate layer (7,8,9) comprises a first insulating material layer (7) placed above the semiconductor material layer (2), a conductive material layer (8) placed above the first insulating material layer (7), and a second insulating material layer (9) placed above the conductive material layer (8). Insulating material sidewall spacers (13) are provided to seal edges of the elongated window (12) in the insulated gate layer (7,8,9).
Inventors
- 👤 Ferruccio Frisina
- 👤 Angelo Magri'
- 👤 Giuseppe Ferla
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D12/00; H10D12/01; H10D12/031; H10D12/032; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127; H10D62/17; H10D62/393; H10D62/13; H10D62/149; H10D62/151; H10D62/152; H10D62/155
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
200 words
MOS technology power device comprising: a semiconductor material layer (2) of a first conductivity type; a conductive insulated gate layer (7,8,9) covering the semiconductor material layer (2); a plurality of elementary functional units, each elementary functional unit comprising a body region (3) of a second conductivity type formed in the semiconductor material layer (2), the body region (3) having the form of an elongated body stripe, each elementary functional unit further comprising an elongated window (12) in the insulated gate layer (7,8,9) extending above said elongated body stripe (3), characterized in that: each body stripe (3) includes at least one source portion (60;61;62) doped with dopants of the first conductivity type, intercalated with a body portion (40;41;3') of the body stripe (3) wherein no dopant of the first conductivity type are provided; the conductive insulated gate layer (7,8,9) comprises a first insulating material layer (7) placed above the semiconductor material layer (2), a conductive material layer (8) placed above the first insulating material layer (7), and a second insulating material layer (9) placed above the conductive material layer (8); insulating material sidewall spacers (13) are provided to seal edges of said elongated window (12) in the insulated gate layer (7,8,9).
Claim 2
Dependent Claim
41 words
MOS technology power device according to claim 1, characterized in that said first insulating material layer (7) is an oxide layer, said conductive material layer (8) is a polysilicon layer, and said second insulating material layer (9) is a passivation layer.
Claim 3
Dependent Claim
22 words
MOS technology power device according to claim 2, characterized in that said polysilicon layer is a doped polysilicon layer with low resistivity.
Claim 4
Dependent Claim
33 words
MOS technology power device according to claim 2, characterized in that said conductive insulated gate layer (7,8,9) further comprises a silicide layer interposed between the polysilicon layer (8) and the passivation layer (9).
Claim 5
Dependent Claim
19 words
MOS technology power device according to claim 4, characterized in that said silicide layer is a cobalt silicide layer.
Claim 6
Dependent Claim
57 words
MOS technology power device according to claim 1, characterized in that each body stripe (3) comprises a central heavily doped deep body stripe (17) and two lateral lightly doped channel stripes (18), said central heavily doped deep body stripe (17) being substantially aligned with the edges of said elongated window (12) in the insulated gate layer (7,8,9).
Claim 7
Dependent Claim
76 words
MOS technology power device according to claim 1, characterized in that each body stripe (3) comprises a plurality of source portions (60) extending in a direction transversal to the body stripe (3) and doped with dopants of the first conductivity type, intercalated in the longitudinal direction of the body stripe (3) with body portions (40) of the body stripe (3) extending in the transversal direction and wherein no dopants of the first conductivity type are provided.
Claim 8
Dependent Claim
33 words
MOS technology power device according to claim 7, characterized in that a longitudinal dimension (Lu) of said source portions (60) is substantially larger than a longitudinal dimension (s) of said body portions (40).
Claim 9
Dependent Claim
57 words
MOS technology power device according to claim 8 comprising a plurality of substantially parallel body stripes (3), characterized in that the source portions (60) and the body portions (40) of a body stripe (3) are substantially aligned in the transversal direction respectively with the source portions (60) and the body portions (40) of adjacent body stripes (3).
Claim 10
Dependent Claim
57 words
MOS technology power device according to claim 8 comprising a plurality of substantially parallel body stripes (3), characterized in that the source portions (60) and the body portions (40) of a body stripe (3) are substantially aligned in the transversal direction respectively with the body portions (40) and the source portions (60) of adjacent body stripes (3).
Claim 11
Dependent Claim
33 words
MOS technology power device according to claim 7, characterized in that a longitudinal dimension (Lu) of said source portions (60) is substantially equal to a longitudinal dimension (s) of said body portions (40).
Claim 12
Dependent Claim
48 words
MOS technology power device according to claim 11, characterized in that the source portions (60) and the body portions (40) of a body stripe (3) are substantially aligned in the transversal direction respectively with the body portions (40) and the source portions (60) of adjacent body stripes (3).
Claim 13
Dependent Claim
124 words
MOS technology power device according to claim 1, characterized in that each body stripe (3) comprises a first longitudinal half-stripe (3') and a second longitudinal half-stripe (3'') merged together, each half-stripe (3',3'') comprising a plurality of source portions (61) extending in a direction transversal to the half-stripe (3',3'') and doped with dopants of the first conductivity type, intercalated in the longitudinal direction of the half-stripe with body portions (41) of the half-stripe (3',3'') extending in the transversal direction and wherein no dopants of the first conductivity type are provided, the source portions (61) and the body portions (41) of one half-stripe (3',3'') being aligned in the transversal direction respectively with the body portions (41) and the source portions (61) of the other half-stripe (3',3'').
Claim 14
Dependent Claim
43 words
MOS technology power device according to claim 13 comprising a plurality of substantially parallel body stripes (3), characterized in that the source portions (61) of a body stripe (3) are located in front of the body portions (41) of adjacent body stripes (3).
Claim 15
Dependent Claim
98 words
MOS technology power device according to claim 1, characterized in that each body stripe (3) comprises a first longitudinal half-stripe (3'') and a second longitudinal half-stripe (3') merged together, the first longitudinal half-stripe (3'') including an elongated source portion (62) extending in the longitudinal direction substantially for the whole length of the half-stripe (3'') and doped with dopants of the first conductivity type, and the second half-stripe (3') forming an elongated body portion extending in the longitudinal direction substantially for the whole length of the half-stripe (3') and wherein no dopants of the first conductivity type are provided.
Claim 16
Dependent Claim
44 words
MOS technology power device according to claim 15 comprising a plurality of substantially parallel body stripes (3), characterized in that said elongated source portion (62) of a body stripe (3) is in front of the elongated body portion of an adjacent body stripe (3).
Claim 17
Dependent Claim
27 words
MOS technology power device according to anyone of the preceding claims, characterized in that said semiconductor material layer (2) is superimposed over a semiconductor material substrate (1).
Claim 18
Dependent Claim
28 words
MOS technology power device according to claim 17, characterized in that said semiconductor material layer (2) is lightly doped, and said semiconductor material substrate (1) is heavily doped.
Claim 19
Dependent Claim
22 words
MOS technology power device according to claim 18, characterized in that said semiconductor material substrate (1) is of the first conductivity type.
Claim 20
Dependent Claim
22 words
MOS technology power device according to claim 18, characterized in that said semiconductor material substrate (1) is of the second conductivity type.
Claim 21
Dependent Claim
33 words
MOS technology power device according to anyone of the preceding claims, characterized in that said first conductivity type is the N conductivity type, and said second conductivity type is the P conductivity type.
Claim 22
Dependent Claim
32 words
MOS technology power device according to anyone of claims 1-20, characterized in that said first conductivity type is the P conductivity type, and said second conductivity type is the N conductivity type.
Claim 23
Dependent Claim
196 words
Process for the manufacturing of a MOS technology power device, comprising the steps of: forming a first insulating material layer (7) over a semiconductor material layer (2) of a first conductivity type; forming a first conductive material layer (8) over the first insulating material layer (7); forming a second insulating material layer (9) over the first conductive material layer (8); selectively removing the second insulating material layer (9) and the first conductive material layer (8) to open at least one elongated window (12) therein; forming a body stripe (3) of a second conductivity type in the semiconductor material layer (2) under said elongated window (12); forming in said body stripe (3) at least one source portion (60;61;62) doped with dopants of the first conductivity type, in such a way as to be intercalated with a body portion (40;41;3') of the body stripe (3) wherein no dopants of the first conductivity type are provided; forming insulating material sidewall spacers (13) along edges of said elongated window (12); forming a second conductive material layer (10) over the second insulating material layer (9), the second conductive material layer (10) contacting said source portion (60;61;62) and said body portion (40;41;3').
Claim 24
Dependent Claim
44 words
Manufacturing process according to claim 23, characterized in that the step of forming said body stripe (3) provides for selectively introducing a dopant of the second conductivity type into the semiconductor material layer (2) using said second insulating material layer (9) as a mask.
Claim 25
Dependent Claim
132 words
Manufacturing process according to claim 24, characterized in that the step of forming said body stripe (3) provides for: performing an implant of a dopant of the second conductivity type at a prescribed high energy and in a heavy dose using the second insulating material layer (9) as a mask, said energy being sufficient to locate a peak concentration of the dopant at a prescribed distance from the surface of the semiconductor material layer (2) under the source portions (60;61;62); performing a thermal diffusion of the implanted dopant with a prescribed thermal budget so that the body stripe (3) comprises a central heavily doped deep body stripe (17) and two lateral lightly doped channel stripes (18), the deep body stripe (17) being substantially aligned with the edges of said elongated window (12).
Claim 26
Dependent Claim
141 words
Manufacturing process according to claim 23, characterized in that the step of forming said body stripe (3) provides for: performing a first implant of a dopant of the second conductivity type using the second insulating material layer (9) as a mask, with an implant energy suitable to locate the peak dopant concentration substantially at the surface of the semiconductor material layer, the implant dose determining the threshold voltage of the MOS power device; performing a second implant of a dopant of the second conductivity type using the second insulating material layer (9) as a mask, with an implant dose substantially higher than that of the first implant, the implant energy being suitable to locate the peak dopant concentration at a prescribed distance from the surface of the semiconductor material layer (2) under the source portions (60;61;62); performing a thermal diffusion process.
Claim 27
Dependent Claim
42 words
Manufacturing process according to claim 23, characterized in that said first insulating material layer (7) is a silicon dioxide layer, said first conductive material layer (8) is a doped polysilicon layer, and said second insulating material layer (9) is a passivation layer.
Claim 28
Dependent Claim
62 words
Manufacturing process according to claim 23, characterized in that the step of selectively removing of the second insulating material layer (9) and the first conductive material layer (8) is performed by means of a unique photolithography, said elongated window (12) having a transversal dimension (Lp) substantially equal to the optical resolution limit (f) of the photolithographic apparatus used to perform said photolithography.
Claim 29
Dependent Claim
24 words
Manufacturing process according to claim 23, characterized in that said first conductive material layer (8) comprises a doped polysilicon layer and a silicide layer.
Claim 30
Dependent Claim
17 words
Manufacturing process according to claim 29, characterized in that said silicide layer is a cobalt silicide layer.
Claim 31
Dependent Claim
46 words
Manufacturing process according to claim 23, characterized in that it provides for forming a plurality of said elongated windows (12) substantially parallel with one another, and for forming in the semiconductor material layer (2) a respective plurality of body stripes (3) of the second conductivity type.
Claim 32
Dependent Claim
32 words
Manufacturing process according to anyone of claims 23 to 31, characterized in that said semiconductor material layer (2) is a lightly doped layer epitaxially grown over a heavily doped semiconductor substrate (1).
Claim 33
Dependent Claim
19 words
Manufacturing process according to claim 32, characterized in that said semiconductor substrate (1) is of the first conductivity type.
Claim 34
Dependent Claim
18 words
Manufacturing process according to claim 32, characterized in that said semiconductor substrate is of the second conductivity type.
Claim 35
Dependent Claim
28 words
Manufacturing process according to anyone of claims 23-34, characterized in that said first conductivity type is the N type, and said second conductivity type is the P type.
Claim 36
Dependent Claim
30 words
Manufacturing process according to anyone of claims 23 to 34, characterized in that said first conductivity type is the P type, and said second conductivity type is the N type.
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