EP0712152A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device and method for its manufacture
Assignee: Fuji Electric Co Ltd
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Filing: 1995-11-07
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Granted: —
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Expires: 2015-11-07
Abstract
Abstract In a semiconductor manufacturing process, one processing step is eliminated by replacing the photoresist film conventionally used for masking during the formation of the heavily doped n-type layer by an oxide film, and by monitoring, in the monitor region, the simultaneous formation of the contact holes in the oxide films different in the respective thickness thereof, an n+ region (9) is formed by using a second insulation film (7) and a polysilicon gate electrode (8) formed on a semiconductor wafer (200) as masks for implanting arsenic ions. And, a contact hole (11) to be formed on a p-type region (5) covered with a fourth insulation film (10) and a second insulation film (3) and a contact hole (11) to be formed on the n+ region (9) covered with the fourth insulation film (10) are formed simultaneously under the monitoring of the formation of the contact holes (11) in a monitor region (22).
Inventors
- 👤 Tatsuhiko Fujihira
- 👤 Takeyoshi Nishimura
- 👤 Seiji Momota
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 07:43
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0181; H10D84/02; H10D84/03; H10D84/038; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
346 words
A method of manufacturing at least one semiconductor device on a single- or multi-layered semiconductor substrate, the method comprising the steps of: forming a first insulation film on a major surface of a layer of a first conductivity type of said semiconductor substrate; selectively removing a part of said first insulation film, thereby to form at least one window in the first insulation film; implanting impurity ions of a second conductivity type into said layer of the first conductivity type through said at least one window; selectively forming at least one region of the second conductivity type by thermally diffusing said implanted impurity ions into said layer of the first conductivity type; forming a second insulation film prior to or after the formation of said at least one region of the second conductivity type; selectively removing a part of said first and second insulation films thereby to expose a part of said layer of the first conductivity type and a part of said at least one region of the second conductivity type; forming third insulation films on said exposed part of said layer of the first conductivity type and said exposed part of said at least one region of the second conductivity type; forming gate electrodes on said third insulation films; forming heavily doped regions of the first conductivity type by selectively implanting impurity ions of the first conductivity type, using said first insulation film, said second insulation film and said gate electrodes for masking, into the portions of said layer of the first conductivity type and said at least one region of the second conductivity type, said portions being not covered with said first insulation film, said second insulation film and said gate electrodes; forming a fourth insulation film atop said at least one semiconductor device; and simultaneously forming at least one contact hole that reaches said at least one region of the second conductivity type through said fourth and second insulation films and at least one contact hole that reaches said heavily doped regions of the first conductivity type through said fourth insulation film.
Claim 2
Dependent Claim
35 words
The method of claim 1, wherein said second insulation film is two or more times as thick as the average implantation depth of said impurity ions of the first conductivity type in the insulation film.
Claim 3
Dependent Claim
35 words
The method of claim 1, wherein said second insulation film is ten times or less as thick as the average implantation depth of said impurity ions of the first conductivity type in the insulation film.
Claim 4
Dependent Claim
127 words
The method of claim 1, wherein a plurality of the semiconductor devices are arranged on said semiconductor substrate, and wherein at least one monitor region, for judging the end of etching process for removing said fourth and second insulation films at the formation of said contact holes, is formed on at least one of the regions of the second conductivity type on a portion of said semiconductor substrate wherein said plurality of the semiconductor devices is not arranged, said at least one monitor region comprising a second insulation film and a fourth insulation film laminated on said at least one region of the second conductivity type, said etching process being terminated after said second and fourth insulation films have been removed and said region has been exposed.
Claim 5
Dependent Claim
30 words
The method of claim 4, wherein said at least one monitor region is arranged outside that region of said semiconductor substrate wherein said plurality of the semiconductor devices are arranged.
Claim 6
Dependent Claim
21 words
The method of claim 5, wherein said at least one monitor region is surrounded by a plurality of the semiconductor devices.
Claim 7
Dependent Claim
29 words
The method of claim 5, wherein said at least one monitor region is arranged on a scribe line disposed for separating two of said plurality of the semiconductor devices.
Claim 8
Dependent Claim
32 words
The method of claim 5, wherein said at least one monitor region is arranged in the peripheral region of said semiconductor substrate wherein said plurality of the semiconductor devices are not arranged.
Claim 9
Dependent Claim
66 words
The method of claim 1, wherein said contact holes are formed by etching said fourth and second insulation films, and said etching is terminated after a predetermined period of time has elapsed, said predetermined period consisting of a leeway period and an estimated period, said estimated period being a determined or calculated period of time during that said fourth and second insulation films are completely removed.
Claim 10
Dependent Claim
35 words
A semiconductor device manufactured by the method of claim 1, wherein the thickness of the insulation film varies around each of the contact holes, between the contact holes, or around and between the contact holes.
Claim 11
Dependent Claim
29 words
The semiconductor device of claim 10, comprising at least one of the devices selected from a group consisting of an insulated gate type device, an IC and power IC.
Claim 12
Dependent Claim
32 words
The semiconductor device of claim 10, comprising at least one of the devices selected from a group consisting of a vertical MOSFET, a vertical IGBT, a lateral MOSFET and a lateral IGBT.
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