EP0704900A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Film carrier semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1995-09-28
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Granted: —
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Expires: 2015-09-28
Abstract
Abstract A film carrier semiconductor device 10 comprises a semiconductor bare chip 20 and a carrier film 30. Chip electrodes 21 are provided on the bare chip 20. Each chip electrode 21 is electrically connected to the carrier film 30. Bump electrodes 37 are formed and arranged as an array on the carrier film 30 on the side of the other surface 31b of the film 30. Interconnection layers 32 are provided on the carrier film 30 to connect some of the chip electrodes 21b to the bump electrodes 37a and 37b. The semiconductor device 10 also comprises a noise blocking layer 60 provided on the carrier film 30 outside the chip mounting region. The noise blocking layer 60 is electrically connected to at least one of the chip electrodes 21a.
Inventors
- 👤 Shuichi c/o NEC Corporation Matsuda
- 👤 Keiichiro C/O Nec Corporation Kata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 15:01
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W42/00; H10W42/20; H10W70/00; H10W70/40; H10W70/453; H10W70/60; H10W70/62; H10W70/65; H10W70/67; H10W70/68; H10W70/685; H10W90/00; H10W90/701; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
80 words
A film carrier semiconductor device (10) comprising a semiconductor chip (20) having chip electrodes (21) on one surface (20b) thereof; a carrier film (30) adhered to said surface of the semiconductor chip, interconnections (32) on the side of the carrier film facing said semiconductor chip being connected to the chip electrodes within a chip mounting region beneath said semiconductor chip; and characterised by a noise blocking means (60) on said film outwardly of and extending around the chip mounting region.
Claim 2
Dependent Claim
22 words
A film carrier semiconductor device as claimed in claim 1, characterised in that said noise blocking means is a noise blocking layer.
Claim 3
Dependent Claim
102 words
A film carrier semiconductor device (10) comprising a semiconductor bare chip (20) having chip electrodes (21) on one surface (20b) thereof; and a carrier film (30) connected to the chip electrodes and adhered to said semiconductor bare chip on the side of the one surface, said carrier film being provided with interconnection layers (32) on the side facing to said semiconductor bare chip with a chip mounting region corresponding to where said semiconductor bare chip is mounted, characterised in that said film carrier semiconductor device further comprises a noise blocking layer (60) provided along the periphery thereof outside the chip mounting region.
Claim 4
Dependent Claim
154 words
A film carrier semiconductor device (10) comprising a semiconductor chip (20); a carrier film (30) having first and second surfaces (31a,31b), the first surface facing to said semiconductor chip; bump electrodes (37) provided on said carrier film on the side of the second surface, a first group of bump electrodes (37a) being located within a chip mounting region corresponding to where said semiconductor bare chip is mounted while a second group of said bump electrodes (37b,37c) being located outside the chip mounting region; chip electrodes (21) proved between said semiconductor chip and said carrier film, said chip electrodes each being located within the chip mounting region and electrically connected with said carrier film; interconnection layers (32) for connecting said chip electrodes and said bump electrodes of the first group, characterised in that said film carrier semiconductor device further comprises a noise blocking layer (60) provided on said carrier film outside the chip mounting region.
Claim 5
Dependent Claim
169 words
A film carrier semiconductor device (10) comprising a semiconductor chip (20); a carrier film (30) having first and second surfaces (31a, 31b), the first surface facing to said semiconductor chip, said carrier film being larger in length and width than said semiconductor chip; bump electrodes (37) provided on said carrier film on the side of the second surface, a first group of bump electrodes (37a) being located within a chip mounting region corresponding to where said semiconductor bare chip is mounted while a second group of said bump electrodes (37b, 37c) being located outside the chip mounting region; chip electrodes (21) provided between said semiconductor chip and said carrier film, said chip electrodes each being located within the chip mounting region and electrically connected with said carrier film; interconnection layers (32) for connecting said chip electrodes and said bump electrodes of the first group, characterised in that said film carrier semiconductor device further comprises a noise blocking layer. (60) provided on said carrier film outside the chip mounting region.
Claim 6
Dependent Claim
27 words
A film carrier semiconductor device as claimed in any of claims 2 to 5, characterised in that said noise blocking layer is made of a conductive material.
Claim 7
Dependent Claim
32 words
A film carrier semiconductor device as claimed in any of claims 2 to 6, characterised in that said noise blocking layer is electrically connected to at least one of said chip electrodes.
Claim 8
Dependent Claim
38 words
A film carrier semiconductor device as claimed in claim 6, characterised in that at least one of said chip electrodes is for supplying power to said device and said noise blocking layer serves as a power supply layer.
Claim 9
Dependent Claim
35 words
A film carrier semiconductor device as claimed in claim 6, characterised in that at least one of said chip electrodes is for grounding said device and said noise blocking layer serves as a ground layer.
Claim 10
Dependent Claim
30 words
A film carrier semiconductor device as claimed in claim 6, characterised in that said noise blocking layer is formed of two layers between which an insulation film (31) is interposed.
Claim 11
Dependent Claim
68 words
A film carrier semiconductor device as claimed in claim 10, characterised in that one of the two layers is a power supply layer and the other is a ground layer, the power supply layer being electrically connected to said chip electrodes that are for use in supplying power to said device while the ground layer being electrically connected to said chip electrodes that are for grounding said device.
Claim 12
Dependent Claim
24 words
A film carrier semiconductor device as claimed in any preceding claim, characterised in that said device is sealed to form a hermetic semiconductor device.
Claim 13
Dependent Claim
20 words
A film carrier semiconductor device as claimed in claim 12, characterised in that said device is sealed with a resin.
References Cited (Backward Citations)
JPH05129366A
Cited
JPH0677293A
Cited
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