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EP0697708A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor fuse devices

Assignee: Freescale Semiconducteurs France SAS
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Filing: 1995-07-13
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Granted: —
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Expires: 2015-07-13
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Abstract

Abstract A semiconductor fuse device is formed of a conductive semiconductor substrate (11) having a top surface and a bottom surface. A layer (12) of dielectric material is provided on a portion of the top surface and a first conductive layer (15) is formed wholly on a first portion of the layer (12) of dielectric material and forms a first contact of the device. A second conductive layer (14) is formed on a second portion of the layer (12) of dielectric material spaced from the first portion and extends to contact the top surface of the substrate (11). A fuse portion (16) is formed wholly on the layer (12) of dielectric material and extends between and in electrical contact with the first and second conductive layers (14, 15). The bottom surface of the substrate (11) provides a second contact of the device, so that only one wire bond is necessary.

Inventors

  • 👤 André Peyre-Lavigne
  • 👤 Jean Michel Reynes
  • 👤 Emmanuel Scheid
  • 👤 Danielle Bielle Daspet

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 01:41
CPC Classifications
H; H01; H01H; H01H85/00; H01H85/02; H01H85/04; H01H85/041; H01H85/046; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 121 words
A semiconductor fuse device comprising a conductive semiconductor substrate having a top surface and a bottom surface, a layer of dielectric material on a portion of the top surface, a first conductive layer wholly formed on a first portion of the layer of dielectric material and forming a first contact of the device, a second conductive layer formed on a second portion of the layer of dielectric material spaced from the first portion and extending to contact the top surface of the substrate, a fuse portion formed wholly on said layer of dielectric material and extending between and in electrical contact with the first and second conductive layers, said bottom surface of the substrate providing a second contact of the device.
Claim 2
Dependent Claim 37 words
A semiconductor fuse device according to claim 1, further comprising a highly conductive region provided in the substrate adjacent the second conductive layer, said highly conductive region having a higher conductivity than the rest of the substrate.
Claim 3
Dependent Claim 26 words
A semiconductor fuse device according to either claim 1 or claim 2, further comprising a third conductive layer provided on the bottom surface of the substrate.
Claim 4
Dependent Claim 16 words
A semiconductor fuse device according to any preceding claim, wherein said substrate is Arsenic doped silicon.
Claim 5
Dependent Claim 19 words
A semiconductor fuse device according to claim 4, wherein the level of arsenic doping is 2 x 10¹⁹ at/cm³.
Claim 6
Dependent Claim 20 words
A semiconductor fuse device according to any one of claims 1 to 3, wherein said substrate is Phosphorus doped silicon.
Claim 7
Dependent Claim 17 words
A semiconductor fuse device according to claim 2, wherein said highly conductive region is Phosphorus doped silicon.
Claim 8
Dependent Claim 19 words
A semiconductor fuse device according to claim 6, wherein the level of Phosphorus doping is 2 x 10²⁰ at/cm³.
Claim 9
Dependent Claim 17 words
A semiconductor fuse device according to any preceding claim, wherein said fuse is phosphorus doped polycrystalline silicon.

References Cited (Backward Citations)

FR2085918A1 Cited
EP0141075A1 Cited
US4495222A Cited
JPS6130060A Cited
JPH04209437A Cited
US5256899A Cited

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