Patent EP0660409A1 successfully refreshed from Google Patents.
EP0660409A1
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EP
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Method for fabricating integrated circuits
Assignee: NCR International Inc
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Filing: 1994-12-06
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Granted: —
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Expires: 2014-12-06
Abstract
Abstract A method for fabricating an integrated circuit device includes applying, over top layer metal lines (28), a passivation oxide layer (30), followed by a layer of relatively low dielectric constant material (34), such as spin-on-glass, prior to encapsulation in a relatively high dielectric constant material. The method provides a device with low cross-talk and small capacitive coupling between the top layer metal lines (28).
Inventors
- 👤 Derryl D.J. Allman
- 👤 Kenneth P. Fuchs
- 👤 Gayle W. Miller
- 👤 Samuel C. Gioia
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:57
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
60 words
A method of producing an integrated circuit device, characterized of the steps of: providing an integrated circuit device having a plurality of metal interconnect lines (28) and a passivation layer (30) disposed thereon; applying a relatively low dielectric constant material (34) over said passivation layer (30); and encapsulating the integrated circuit device in a relatively high dielectric constant packaging material.
Claim 2
Dependent Claim
28 words
A method according to claim 1, characterized in that said relatively low dielectric constant material (34) is applied to a thickness of between 0.1 micron and 20 microns.
Claim 3
Dependent Claim
30 words
A method according to claim 1 or claim 2, characterized in that said relatively low dielectric constant material (34) has a dielectric constant of a value between 2 and 5.
Claim 4
Independent Claim
39 words
A method according to any one of the preceding claims, characterized by the step of curing said integrated circuit device following said step of applying a relatively low dielectric constant material (34) and prior to said step of encapsulating.
Claim 5
Dependent Claim
30 words
A method according to claim 4, characterized in that said step of curing is carried out by heating in an atmosphere selected from air, oxygen, argon, nitrogen and forming gas.
Claim 6
Dependent Claim
30 words
A method according to claim 5, characterized in that said step of curing includes heating to a temperature in the range of from 100 degrees Celsius to 500 degrees Celsius.
Claim 7
Dependent Claim
26 words
A method according to claim 6, characterized in said step of curing includes heating to a temperature of about 400 degrees Celsius for about one hour.
Claim 8
Independent Claim
22 words
A method according to any one of the preceding claims, characterized in that said relatively low dielectric constant material (34) is spin-on-glass.
Claim 9
Independent Claim
22 words
A method according to anyone of claims 1 to 7, characterized in that said relatively low dielectric constant material (34) is polyimide.
Claim 10
Independent Claim
25 words
A method according to any one of claims 1 to 7, characterized in that said relatively low dielectric constant material (34) is a glass resin.
Claim 11
Independent Claim
23 words
A method according to any one of claims 1 to 7, characterized in that said relatively low dielectric constant material (34) is Teflon.
References Cited (Backward Citations)
DE3116406A1
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