EP0637087A1
Expired / Lapsed
EP
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Layered structure comprising insulator thin film and oxide superconductor thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-07-26
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Granted: —
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Expires: 2014-07-26
Abstract
Abstract A layered structure formed on a substrate comprising a Ly₁Ba₂Cu₃O 7-δ (Ly means a lanthanoide or yttrium and 0<δ<1) oxide superconductor thin film deposited on the substrate and an insulator thin film of Ba z Sr 1-z TiO₃ (0≦z≦1) deposited on the Ly₁Ba₂Cu₃O 7-δ oxide superconductor thin film. The insulator thin film is formed of Ba z Sr 1-z TiO₃ (0<z≦1) at the bottom.
Inventors
- 👤 Hitoki C/O Osaka Works Tokuda
- 👤 Michitomo C/O Osaka Works Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0381
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
65 words
A layered structure formed on a substrate comprising a Ly₁Ba₂Cu₃O 7-δ (Ly means a lanthanoide or yttrium and 0<δ<1) oxide superconductor thin film deposited on the substrate and an insulator thin film of Ba z Sr 1-z TiO₃ (0≦z≦1) deposited on the Ly₁Ba₂Cu₃O 7-δ oxide superconductor thin film wherein the insulator thin film is formed of Ba z Sr 1-z TiO₃ (0<z≦1) at the bottom.
Claim 2
Dependent Claim
21 words
A layered structure as claimed in Claim 1, wherein the insulator thin film is formed of Ba 0.4 Sr 0.6 TiO₃.
Claim 3
Dependent Claim
39 words
A layered structure as claimed in Claim 1, wherein the insulator thin film is formed of a tri-layer consisting of a BaTiO₃ layer, a Ba 0.2 Sr 0.8 TiO₃ layer and a SrTiO₃ layer stacked in the named order.
Claim 4
Dependent Claim
46 words
A layered structure as claimed in Claim 1, wherein the insulator thin film is formed of a Ba z Sr 1-z TiO₃ (0≦z≦1) gradient composition insulator film in which z is equal to 1 at the bottom and z is equal to 0 at the top.
Claim 5
Dependent Claim
25 words
A layered structure as claimed in Claim 1, wherein the layered structure further comprising a buffer layer between the substrate and the superconductor thin film.
Claim 6
Dependent Claim
19 words
A layered structure as claimed in Claim 5, wherein the the buffer layer is formed of Pr₁Ba₂Cu₃O 7-x .
Claim 7
Dependent Claim
24 words
A layered structure as claimed in Claim 1, wherein the layered structure further comprising a normal conductor layer deposited on the insulator thin film.
Claim 8
Dependent Claim
22 words
A layered structure as claimed in Claim 1, wherein the oxide thin film is formed of a Y-Ba-Cu-O compound oxide superconductor material.
Claim 9
Dependent Claim
16 words
A layered structure as claimed in Claim 1, wherein the substrate is formed of an insulator.
Claim 10
Dependent Claim
35 words
A layered structure as claimed in Claim 9, wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO₃ (100) substrate and a CdNdAlO₄ (001) substrate.
Claim 11
Dependent Claim
46 words
A layered structure as claimed in Claim 7, wherein the layered structure is applied to a gate structure of a superconducting field effect device comprising a superconducting channel of an oxide superconductor and a gate electrode arranged on the superconducting channel through a gate insulator layer.
References Cited (Backward Citations)
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