EP0446146A2
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EP
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Stacked Josephson junction device composed of oxide superconductor material
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-03-11
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Granted: —
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Expires: 2011-03-11
Abstract
Abstract A stacked Josephson junction device includes a pair of oxide superconductor layers and a non-superconductor layer formed between the pair of oxide superconductor layers. The oxide superconductor layers are composed of a compound oxide having the composition expressed by the general formula: LnBa₂Cu₃O v (where Ln is Y or rare earth element and 6 < v ≦ 7). The non-superconductor layer is composed of a chemical compound having the composition expressed by the general formula: Bi₂Y x Sr y Cu z O w (where x, y, z and w indicate ratio of components 0 ≦ x ≦ 2, 1 ≦ y ≦ 3, 1 ≦ z ≦ 3, 6 ≦ w ≦ 13.
Inventors
- 👤 Keizo Harada
- 👤 Hideo Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:27
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
110 words
A stacked Josephson junction device including a pair of oxide superconductor layers and a non-superconductor layer formed between the pair of oxide superconductor layers, the oxide superconductor layers including a composed oxide having the composition expressed by the general formula: LnBa₂Cu₃O v (where Ln is Y or rare earth element and 6 < v ≦ 7) and the non-superconductor layer including a chemical compound having the composition expressed by the general formula: Bi₂Y x Sr y Cu z O w (where x, y, z and w indicate ratio of components 0 ≦ x ≦ 2, 1 ≦ y ≦ 3, 1 ≦ z ≦ 3, 6 ≦ w ≦ 13.
Claim 2
Dependent Claim
86 words
A stacked Josephson junction device claimed in Claim 1 wherein said Bi₂Y x Sr y Cu z O w has a composition ratio x : y : z to the effect that said Bi₂Y x Sr y Cu z O w non-superconductor layer exhibits a normal conductor property or a semiconductor property, and wherein said Bi₂Y x Sr y Cu z O w has a thickness in the range of 30 Å to 500 Å, so that a SNS (superconductor-normal conductor-superconductor) type Josephson device is formed.
Claim 3
Dependent Claim
26 words
A sucked Josephson junction device claimed in Claim 2 wherein said composition ratio "x" in said Bi₂Y x Sr y Cu z O w is 0.
Claim 4
Dependent Claim
34 words
A stacked Josephson junction device claimed in Claim 2 wherein said composition ratio x : y : z in said Bi₂Y x Sr y Cu z O w is 0 : 2 : 1.
Claim 5
Dependent Claim
32 words
A stacked Josephson junction device claimed in Claim 2 wherein said composition ratio x : y: z in said Bi₂Y x Sr y Cu z O w is 0: 1.8 : 1.1.
Claim 6
Dependent Claim
80 words
A stacked Josephson junction device claimed in Claim 1 wherein said Bi₂Y x Sr y Cu z O w has a composition ratio x : y : z to the effect that said Bi₂Y x Sr y Cu z O w non-superconductor layer exhibits an insulator property, and wherein said Bi₂Y x Sr y Cu z O w has a thickness in the range of 20 Å to 60 Å, so that a SIS (superconductor-insulator-superconductor) type Josephson device is formed.
Claim 7
Dependent Claim
26 words
A stacked Josephson junction device claimed in Claim 6 wherein said composition ratio "x" in said Bi₂Y x Sr y Cu z O w is 1
Claim 8
Dependent Claim
34 words
A sucked Josephson junction device claimed in Claim 6 wherein said composition ratio x : y : z in said Bi₂Y x Sr y Cu z O w is 1 : 1.2 : 2.8
Claim 9
Dependent Claim
42 words
A stacked Josephson junction device claimed in Claim 1 wherein one of said pair of oxide superconductor layers is formed on a MgO(100) single crystal substrate, a MgO(110) single crystal substrate, a SrTiO₃(100) single crystal substrate, or a SrTiO₃(110) single crystal substrate.
Claim 10
Dependent Claim
184 words
A Josephson junction device comprising a first superconductor layer formed of oxide superconductor thin film formed on a substrate, a non-superconductor layer formed on a central convex portion of said first superconductor layer, and a second superconductor layer formed of oxide superconductor thin film formed on said non-superconductor layer without directly contacting with said first superconductor layer, a first and second metal electrodes located on said second superconductor layer separately from each other, third and second metal electrodes provided respectively on opposite end portions of said first superconductor layer on which said metal thin layer is not formed, the oxide superconductor layers including a compound oxide having the composition expressed by the general formula: LnBa₂Cu₃O v (where Ln is Y or rare earth element and 6 < v ≦ 7) and the non-superconductor layer including a chemical compound having the composition expressed by the general formula: Bi₂Y x Sr y Cu z O w (where x, y, z and w indicate ratio of components 0 ≦ x ≦ 2, 1 ≦ z ≦ 3, 1 ≦ z ≦ 3, 6 ≦ w ≦ 13.
References Cited (Backward Citations)
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