Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
179 words
An optoelectronic semiconductor device comprising an array of at least a first (11) and a second (12) semiconductor diode laser and with a semiconductor body (10) which comprises a semiconductor substrate (1) of a first conductivity type on which a semiconductor layer structure is situated which comprises at least in that order: a first cladding layer (2) of the first conductivity type, an active layer (3) in which a first (31) and a second (32) active region of the first (11) and the second (12) laser, respectively, are present, and a second cladding layer (4) of a second conductivity type opposed to the first, the first and the second cladding layer (2, 4) being provided with means (5, 6, 7, 8, 9) for electrical connection of the first (11) and the second (12) laser which are mutually separated by a groove (20) which extends from the surface (13) of the semiconductor body (10) down into the substrate (1), characterized in that the groove (20) is situated within the substrate (1) for a major portion (d) of its depth (D).
Claim 2
Dependent Claim
31 words
An optoelectronic semiconductor device as claimed in Claim 1, characterized in that the portion (d) of the groove (20) situated within the substrate (1) is at least approximately 3 µm deep.
Claim 3
Dependent Claim
33 words
An optoelectronic semiconductor device as claimed in Claim 1 or 2, characterized in that the portion (d) of the groove (20) situated within the substrate (1) is at least approximately 10 µm deep.
Claim 4
Dependent Claim
34 words
An optoelectronic semiconductor device as claimed in Claim 1, 2 or 3, characterized in that the portion (d) of the groove (20) situated within the substrate (1) is at most approximately 40 µm deep.
Claim 5
Dependent Claim
80 words
An optoelectronic device as claimed in Claim 1, 2 or 3, characterized in that the distance from the first (31) to the second (32) active region is between approximately 15 and 50 µm and is preferably as small as possible, and the width of the groove (20) lies between approximately 5 µm and a width which is approximately 10 µm smaller than the distance between the first (31) and second (32) active region and is preferably as small as possible.
Claim 6
Dependent Claim
27 words
An optoelectronic semiconductor device as claimed in any one of the preceding Claims, characterized in that the groove (20) is formed by means of reactive ion etching.
Claim 7
Dependent Claim
52 words
An optoelectronic semiconductor device as claimed in any one of the preceding Claims, characterized in that a current-blocking layer (6) is present below the first cladding layer (2) or on the second cladding layer (4), which current-blocking layer is interrupted at the areas of the first (31) and second (32) active regions.
Claim 8
Dependent Claim
50 words
An optoelectronic semiconductor device as claimed in any one of the preceding Claims, characterized in that the cladding layers (2, 4) comprise InAlGaP, the active layer (3) comprises InGaP or InAlGaP, and the substrate (1) and a contact layer (6, 7) present on the second cladding layer (4) comprise GaAs.
Claim 9
Dependent Claim
47 words
An optoelectronic semiconductor device as claimed in any one of the preceding Claims, characterized in that the means (8) for electrical connection which are present on the surface (13) of the semiconductor body (10) comprise a comparatively thick, preferably 2 to 6 µm thick, metal layer (18).
Claim 10
Independent Claim
146 words
A method of manufacturing an optoelectronic semiconductor device which comprises an array of at least two semiconductor diode lasers, whereby a semiconductor body is formed in that on a semiconductor substrate a semiconductor layer structure is provided comprising in that order a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type opposed to the first, after which the cladding layers (2, 4) are provided with means (5, 6, 7, 8) for electrical connection and a groove is formed in the semiconductor body extending from the surface down into the substrate, while on either side of this groove a first and a second active region are formed in the active layer, characterized in that the groove is formed so deep that a major portion of the groove is situated within the substrate.
Claim 11
Dependent Claim
20 words
A method as claimed in Claim 8, characterized in that the groove is formed by means of reactive ion etching.
Claim 12
Dependent Claim
45 words
A method as claimed in Claim 9, characterized in that the plasma used in the reactive ion etching process is generated in a gas mixture which comprises SiCl₄, Ar and CH₄, preferably 25 to 30 vol. % SiCl₄ and 20 to 25 vol. % CH₄.