EP0161924A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser array
Assignee: Sharp Corp
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Filing: 1985-05-10
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Granted: —
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Expires: 2005-05-10
Abstract
Abstract A semiconductor laser array includes a plurality of stripe--shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than the buried layer, whereby the optical coupling is performed with no phase difference.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 17:05
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/30; H01S5/32; H01S5/4081; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/227; H01S5/2275; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
58 words
A semiconductor laser array comprising: a semiconductor substrate; a plurality of stripe-shaped stimulated regions of the index guide type formed on said semiconductor substrate; and a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions, wherein said plurality of stripe-shaped stimulated regions have the optical loss greater than said plurality of buried layers.
Claim 2
Dependent Claim
58 words
A semiconductor laser array comprising: a semiconductor substrate; a plurality of stripe-shaped stimulated regions of the index guide type formed on said semiconductor substrate; and a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions, wherein said plurality of stripe-shaped stimulated regions have the optical loss greater than said plurality of buried layers.
Claim 3
Dependent Claim
146 words
A semiconductor laser array comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; a plurality of stripe-shaped stimulated regions formed on said second cladding layer, each of said plurality of stripe-shaped stimulated regions including: a light absorption layer formed on said second cladding layer; a third cladding layer formed on said light absorption layer; and a cap layer formed on said third cladding layer; a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said semiconductor substrate.
Claim 4
Dependent Claim
146 words
A semiconductor laser array comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; a plurality of stripe-shaped stimulated regions formed on said second cladding layer, each of said plurality of stripe-shaped stimulated regions including: a light absorption layer formed on said second cladding layer; a third cladding layer formed on said light absorption layer; and a cap layer formed on said third cladding layer; a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said semiconductor substrate.
Claim 5
Dependent Claim
197 words
A GaAlAs semiconductor laser array comprising: an n-GaAs substrate; an n-Ga 0.6 Al 0.4 As cladding layer formed on said n-GaAs substrate; a p-Ga 0.9 Al 0.1 As active layer formed on said n-Ga 0.6 Al 0.4 As cladding layer; a p-Ga 0.6 Al 0.4 As cladding layer formed on said p-Ga 0.9 Al 0.1 As active layer; a plurality of stripe-shaped stimulated regions formed on said p-Ga 0.6 Al 0.4 As cladding layer, each of said plurality of stripe-shaped stimulated regions including: p-GaAs light absorption layer formed on said p-Ga 0.6 Al 0.4 -As cladding layer; a p-Ga 0.6 Al 0.4 As cladding layer formed on said p-GaAs light absorption layer; and a p-GaAs cap layer formed on said p-Ga 0.6 Al 0.4 As cladding layer; a plurality of n-Ga 0.5 Al 0.5 As buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of n-Ga 0.5 AL 0.5 As buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said n-GaAs substrate.
Claim 6
Dependent Claim
197 words
A GaAlAs semiconductor laser array comprising: an n-GaAs substrate; an n-Ga 0.6 Al 0.4 As cladding layer formed on said n-GaAs substrate; a p-Ga 0.9 Al 0.1 As active layer formed on said n-Ga 0.6 Al 0.4 As cladding layer; a p-Ga 0.6 Al 0.4 As cladding layer formed on said p-Ga 0.9 Al 0.1 As active layer; a plurality of stripe-shaped stimulated regions formed on said p-Ga 0.6 Al 0.4 As cladding layer, each of said plurality of stripe-shaped stimulated regions including: p-GaAs light absorption layer formed on said p-Ga 0.6 Al 0.4 -As cladding layer; a p-Ga 0.6 Al 0.4 As cladding layer formed on said p-GaAs light absorption layer; and a p-GaAs cap layer formed on said p-Ga 0.6 Al 0.4 As cladding layer; a plurality of n-Ga 0.5 Al 0.5 As buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of n-Ga 0.5 AL 0.5 As buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said n-GaAs substrate.
Claim 7
Dependent Claim
31 words
A semiconductor laser array having a plurality of stripe-shaped stimulated regions (13), characterized in that the said stripe-shaped stimulated regions (13) have a greater optical loss than the regions between them.
Claim 8
Dependent Claim
31 words
A semiconductor laser array having a plurality of stripe-shaped stimulated regions (13), characterized in that the said stripe-shaped stimulated regions (13) have a greater optical loss than the regions between them.
References Cited (Backward Citations)
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