Patent EP0602633A2 successfully refreshed from Google Patents.
EP0602633A2
Expired / Lapsed
EP
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Method of clean up of a patterned metal layer
Assignee: Texas Instruments Inc
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Filing: 1993-12-16
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Granted: —
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Expires: 2013-12-16
Abstract
Abstract A method of fabricating deformable mirror devices, or any other device, in which a metal pattern is to be etched over a photoresist layer. The method includes removal of a contaminating layer (11) that occurs as a result of the metal etch. This removal is accomplished at the wafer level, with an anhydrous hydrofluoric etch followed by a wet rinse.
Inventors
- 👤 Jerry L. Leonard
- 👤 Brynne K. Bohannon
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 13:58
CPC Classifications
H; H10; H10P; H10P95/00; G; G02; G02B; G02B26/00; G02B26/08; G02B26/0816; G02B26/0833; G02B26/0841
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
76 words
A method for patterning metal from a metal layer deposited over a photoresist layer of a semiconductor wafer, comprising the steps of: depositing a metal layer over a photoresist layer on the semiconductor wafer; metal etching away Portions of said metal layer to form a desired metal pattern; removing byproducts of said etching step with an anhydrous hydrofluoric vapor etch of the surface of said wafer; and rinsing the surface of said wafer with a liquid.
Claim 2
Dependent Claim
81 words
The method of Claim 1, wherein said metal etching step is performed by depositing an oxide layer over said metal layer, depositing a photoresist layer over said oxide layer, patterning said photoresist layer to form a photoresist pattern corresponding to said desired metal pattern, removing portions of said oxide layer not covered by said photoresist pattern to form an oxide pattern corresponding to said desired metal pattern, and etching away portions of said metal layer not covered by said oxide pattern
Claim 3
Dependent Claim
21 words
The method of Claim 1, wherein said step of removing byproducts is performed by using water vapor and hydrofluoric acid gas.
Claim 4
Dependent Claim
19 words
The method of Claim 3, wherein said water vapor and hydrofluoric acid gas are carried by a nitrogen carrier.
Claim 5
Dependent Claim
19 words
The method of Claim 1, wherein said step of removing byproducts is immediately preceded by a water vapor pretreatment.
Claim 6
Dependent Claim
21 words
The method of Claim 1, wherein said step of removing byproducts is immediately preceded by a high flow purge of nitrogen.
Claim 7
Dependent Claim
21 words
The method of Claim 1, wherein said step of removing byproducts is immediately followed with a high flow purge of nitrogen.
Claim 8
Dependent Claim
13 words
The method of Claim 1, wherein said rinsing step is performed with water.
Claim 9
Dependent Claim
15 words
The method of Claim 1, further comprising a spin dry step after said rinsing step.
Claim 10
Dependent Claim
84 words
A wafer for subsequent cutting into chip form, having a metal pattern spaced over a substrate, comprising: a metal layer patterned over a spacer layer, wherein said metal layer is patterned by means of an etching process; and a spacer layer underlying said metal layer, whose surface is exposed in areas not covered by said metal layer, wherein the exposed areas of said surface are cleaned of contaminants by etching them with a hydrofluoric vapor etch and then rinsing them with a wet rinse.
Claim 11
Dependent Claim
26 words
The wafer of Claim 10, wherein said spacer layer is etched with a vapor etch resulting from a flow of water vapor and hydrofluoric acid gas.
Claim 12
Dependent Claim
81 words
A wafer for cutting into deformable mirror device chips, having a pattern of mirror elements spaced over a substrate, comprising: a metal layer patterned into mirror elements by means of an etching process; and a spacer layer underlying said metal layer, whose surface is exposed in areas not covered by said metal layer, wherein the exposed areas of said surface have been cleaned of contaminants by etching them with a hydrofluoric vapor etch and then rinsing them with a wet rinse.
Claim 13
Dependent Claim
26 words
The wafer of Claim 12, wherein said spacer layer is etched with a vapor etch resulting from a flow of water vapor and hydrofluoric acid gas.
References Cited (Backward Citations)
EP0469293A1
Cited
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