EP0561402A1
Expired / Lapsed
EP
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Method and apparatus for dry etching
Assignee: Hitachi Ltd
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Filing: 1993-03-18
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Granted: —
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Expires: 2013-03-18
Abstract
Abstract A method and apparatus for dry etching changes the effective pumping speed of a vacuum chamber (19) and/or the gas flow rate to alter the processing of an etching pattern side wall of a sample (6) between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Inventors
- 👤 Kumihashi Takao
- 👤 Tsujinoto Kazunori
- 👤 Tachi Shinichi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:05
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32192; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32917; H01J37/32935; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
75 words
A dry etching method, comprising the steps of: supplying etching gas to a vacuum chamber (19) containing a sample (6), and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the gas to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the sample.
Claim 2
Dependent Claim
31 words
The method of claim 1, wherein the controlling step is performed so that the effective pumping speed of the vacuum chamber and/or the flow rate of the gas is periodically changed.
Claim 3
Dependent Claim
84 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the etching gas so that an etching pattern side wall of the sample changes between a condition in which the etching pattern side wall is formed in a tapered shape and a condition in which the etching pattern side wall is formed in a vertical or undercut shape.
Claim 4
Dependent Claim
51 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the gas to change an angle of an etching pattern side wall of the sample.
Claim 5
Dependent Claim
62 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the gas so that the number of gas particles entering the vacuum chamber can either increase and exceed or decrease and fall below a predetermined value.
Claim 6
Dependent Claim
37 words
The method of claim 5, wherein the predetermined value is determined based on the type of etching gas and/or a condition for changing the gas to a plasma and/or the constitution of the sample to be etched.
Claim 7
Dependent Claim
19 words
The method of claim 5, wherein the predetermined value is three times the number of particles entering the sample.
Claim 8
Dependent Claim
60 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), etching a layer of the sample to form a mask pattern, and overetching the layer to remove etching resident, wherein the effective pumping speed of the vacuum chamber is higher during the overetching step than during the etching step.
Claim 9
Dependent Claim
94 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), etching a layer of the sample to form a mask pattern, overetching the layer to remove etching residue, and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the gas to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the sample.
Claim 10
Dependent Claim
54 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), etching the sample, and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the gas in accordance with the intensity of plasma emission produced in the vacuum chamber.
Claim 11
Dependent Claim
53 words
A dry etching method, comprising the steps of: supplying an etching gas to a vacuum chamber (19) containing a sample (6), etching the sample, and controlling the effective pumping speed of the vacuum chamber and/or the flow rate of the bas based on the area of an underlayer exposed by said etching step.
Claim 12
Dependent Claim
113 words
A dry etching apparatus, comprising: a vacuum chamber (19) having a gas inlet (7) for introducing an etching gas into the vacuum chamber (19), a sample stage (16) in the vacuum chamber (19) for supporting a sample (6) to be etched, means (20, 22) for measuring the intensity of plasma emission produced in the vacuum chamber (19), first control means (9) for controlling the effective pumping speed of the vacuum chamber (19), second control means for controlling the flow rate of the etching gas entering through the inlet (7), and third means (21) for controlling the first and/or second means (9) in accordance with a signal received from the measuring means (20, 22).
Claim 13
Dependent Claim
107 words
A dry etching apparatus, comprising: a vacuum chamber (19) having an inlet (7) for introducing an etching gas into the vacuum chamber (19), a sample stage (16) for supporting a sample (6) to be etched in the vacuum chamber (19), means (23, 24) for measuring the area of an underlayer exposed by the etching gas, first control means (9) for controlling the effective pumping speed of the vacuum chamber (19), second control means for controlling the flow rate of the etching gas, and third control means (21) for controlling the first and/or second means (9) in accordance with a signal received from the measuring means (23, 24).
References Cited (Backward Citations)
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