EP0557590A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for manufacturing a capacitor of a semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-11-27
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Granted: —
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Expires: 2012-11-27
Abstract
Abstract Disclosed is a method for manufacturing a capacitor of a semiconductor device. After forming a polycrystalline layer (50) composed of grains with microscopic structure to include an impurity (70) in them, the polycrystalline layer is etched to cut the boundary portions of the grains, thereby allowing the surface of the polycrystalline layer to be rugged. The micro-trenches (1) or micro-pillars (11) are formed by using the oxide layer or an anisotropic etching after exposing the surface of the first rugged polycrystalline layer, and epitaxial grains (95) are formed by epitaxial growth, so that cell capacitance can be further increased. The simple process allows the formation of a reliable semiconductor device having regularity and reproducibility, and capable of increasing and adjusting the cell capacitance easily.
Inventors
- 👤 Ki-Man Han
- 👤 Chang-Gyu Hwang
- 👤 Dug-Dong Kang
- 👤 Young-Jae Choi
- 👤 Joo-Young Yoon
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 06:24
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/714; H10D1/716; H10P; H10P32/00; H10P32/30; H10P32/302; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/71; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S148/138
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
86 words
In a method for manufacturing a capacitor of a semiconductor device including a first electrode, a dielectric film, and a second electrode, a method for forming said first electrode comprising the steps of: forming a polycrystalline layer (50a) composed of grains of microscopic structure to allow an impurity to be included within them, on a semiconductor substrate; and etching said polycrystalline layer (50a) including said impurity to cut into the boundary portions of said grains, so as to make the surface of said polycrystalline layer rugged.
Claim 2
Dependent Claim
34 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, further comprising a step of patterning said polycrystalline layer (50a), performed after said step of forming said polycrystalline layer.
Claim 3
Dependent Claim
51 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, before said step of making said surface of said polycrystalline layer rugged (50a), further comprising the steps of: forming an oxide layer (52) on the whole surface of the resultant structure; and removing said oxide layer.
Claim 4
Dependent Claim
50 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, after said step of making the surface of said polycrystalline layer rugged, further comprising the steps of: forming an oxide layer (52) on the whole surface of the resultant structure; and removing said oxide layer.
Claim 5
Dependent Claim
102 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, after said step of making the surface of said polycrystalline layer rugged further comprising the steps of: forming an oxide layer (90), anisotropically etching said oxide layer formed on the resultant structure, and leaving said oxide layer between said grains constituting said polycrystalline layer to form a mask (90a) composed of said oxide layer: and forming a micro-trench (1) in said polycrystalline layer by anisotropically etching said rigged polycrystalline layer (80) to a predetermined depth, using said mask (90a) composed of said oxide layer as an etch-mask.
Claim 6
Dependent Claim
31 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 5, wherein said predetermined depth is smaller than of equals to the thickness of said polycrystalline layer.
Claim 7
Dependent Claim
96 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, after said step of making the surface of said polycrystalline layer rugged, further comprising the steps of: forming an oxide layer (91), anisotropically etching said oxide layer formed on the resultant structure, and leaving said oxide layer between said grains constituting said polycrystalline layer to form an epitaxial mask (91a) composed of said oxide layer (91); and growing an epitaxial silicon grain on the exposed portion of said rugged polycrystalline layer (80), using said mask (91a) composed of the oxide material.
Claim 8
Dependent Claim
28 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said impurity (70) is doped during or after depositing said polycrystalline layer.
Claim 9
Dependent Claim
41 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 8, wherein said impurity is doped again on the whole surface of the resultant structure after said step of making said surface of said polycrystalline layer rugged.
Claim 10
Dependent Claim
54 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said step of making said surface of said polycrystalline layer (50a) rigged by cutting the boundary portions of said grains of said polycrystalline layer (50) is carried out, using an etchant which can especially etch said impurity well.
Claim 11
Dependent Claim
34 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 10, wherein an phosphorus ion is used as said impurity (70), and a phosphoric acid is used as said etchant.
Claim 12
Independent Claim
31 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim, 3, wherein said oxide layer (52) is formed via a chemical vapor deposition or a heat treatment.
Claim 13
Dependent Claim
39 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein a polycrystalline silicon layer, an amorphous silicon layer, and a polycrystalline silicon layer having hemispherical grains are used as said polycrystalline layer (50).
Claim 14
Dependent Claim
37 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein the capacitor formation method for making said polycrystalline layer rigged is adopted to a stacked, a trench and a stacked-trench structures.
Claim 15
Dependent Claim
62 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 1, further comprising the steps of stacking a silicon nitride layer and a high temperature oxide (HTO) layer on the whole surface of said semiconductor substrate before said step of patterning said polycrystalline layer (50); and removing a portion of said HTO layer after completing said first electrode.
Claim 16
Independent Claim
120 words
A method for manufacturing a capacitor of a semiconductor device including a first electrode, a dielectric film and a second electrode, wherein a process for forming said first electrode comprises the steps of: forming a polycrystalline layer (80) having rugged surface on a semiconductor substrate: forming an oxide layer (90) on said polycrystalline layer (80), anisotropically etching said oxide layer formed on the resultant structure, and leaving said oxide layer between said grains constituting said polycrystalline layer to form a mask (90a) composed of said oxide layer; and forming a micro-trench (1) in said polycrystalline layer (80) by anisotropically etching said rugged polycrystalline layer to a predetermined depth, using said mask (90a) composed of said oxide layer as an etch-mask.
Claim 17
Dependent Claim
32 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 16, wherein said predetermined depth is less than or equal to the thickness of said polycrystalline layer (80).
Claim 18
Independent Claim
109 words
A method for manufacturing a capacitor of a semiconductor device including a first electrode, a dielectric film and a second electrode, wherein a process for forming said first electrode comprises the steps of: forming a polycrystalline layer (80) having rugged surface on a semiconductor substrate: forming an oxide layer (91) on said polycrystalline layer (80), anisotropically etching said oxide layer (91) formed on the resultant structure, and leaving said oxide layer between said grains constituting said polycrystalline layer to form an epitaxial mask (91a) composed of the oxide material; and growing an epitaxial grain (95) on the exposed portion of said rugged polycrystalline layer (80), using said epitaxial mask.
Claim 19
Dependent Claim
43 words
A method for manufacturing a capacitor of a semiconductor device as claimed in claim 18, wherein said step of growing said epitaxial grain (95) is carried out, using SiH₂Cl₂ + HCl system as a source and using a hydrogen gas as a carrier.
References Cited (Backward Citations)
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