EP0548841A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Magnetoresistance effect element
Assignee: NEC Corp
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Filing: 1992-12-18
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Granted: —
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Expires: 2012-12-18
Abstract
Abstract There is provided a magnetoresistance effect element comprising a substrate (4) and at least two magnetic thin layers (1, 2) which are laminated with interposing a non-magnetic thin layer (6) therebetween on said substrate (4) wherein adjacent magnetic thin layers (1, 2) through the non-magnetic thin layer have different coercive forces, characterized in that a metal thin film (3) is provided in an interface between at least one of the magnetic layers (1, 2) and the non-magnetic layer (6) which is adjacent thereto and the metal thin film (3) is made of a substance which is different from that of the adjacent non-magnetic layer (6).
Inventors
- 👤 Teruya Shinjo
- 👤 Hidefumi Yamamoto
- 👤 Toshihiko Anno
- 👤 Toshio Takada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 11:47
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/11; Y10T428/1107; Y10T428/1121; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12771; Y10T428/12861; Y10T428/12903; Y10T428/1291; Y10T428/12917; Y10T428/12931; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
89 words
A magnetoresistance effect element comprising a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces, characterized in that a metal thin film is provided in an interface between at least one of the magnetic layers and the non-magnetic layer which is adjacent thereto and the metal thin film is made of a substance which is different from that of the adjacent non-magnetic layer.
Claim 2
Dependent Claim
22 words
The magnetoresistance effect element according to claim 1 wherein a thickness of the metal thin film is from 0.5 to 50 Å.
Claim 3
Dependent Claim
18 words
The magnetoresistance effect element according to claim 1 or 2 wherein the substrate has a buffer layer thereon.
References Cited (Backward Citations)
EP0483373A1
Cited
EP0506433A1
Cited
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