Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
61 words
A magnetoresistance effect element comprising a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 Å.
Claim 2
Dependent Claim
44 words
The magnetoresistance effect element according to claim 1, wherein said magnetic thin layer is formed from at least one magnetic substance selected from the group consisting of Fe, Ni, Co, Mn, Cr, by, Er, Nd, Tb, Tm, Ce, Gd and their alloys and compounds.
Claim 3
Dependent Claim
43 words
The magnetoresistance effect element according to claim 2, wherein said alloy or compound is selected from the group consisting of Fe-Si, Fe-Ni, Fe-Co, Fe-Gd, Fe-Al-Si, Fe-Y, Fe-Mn, Cr-Sb, Co base amorphous alloys, Co-Pt, Fe-Al, Fe-C, Mn-Sb, Ni-Mn, Co-O, Ni-O, Fe-O, Ni-F and ferrites.
Claim 4
Dependent Claim
24 words
The magnetoresistance effect element according to claim 1, wherein each of said magnetic thin layers has a thickness of not larger than 200 Å.
Claim 5
Dependent Claim
23 words
The magnetoresistance effect element according to claim 4, wherein a thickness of each of said magnetic thin layers is at least 4 Å.
Claim 6
Dependent Claim
49 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one metallic non-magnetic material selected from the group consisting of Au, Ag, Cu, Pt, Al, Mg, Mo, Zn, Nb, Ta, V, Hf, Sb, Zr, Ga, Ti, Sn, Pb and their alloys..
Claim 7
Dependent Claim
46 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one semimetallic non-magnetic material selected from the group consisting of Si, Ge, C, B and a composite material of at least one of these element and other element.
Claim 8
Dependent Claim
49 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one non-metallic non-magnetic material selected from the group consisting of SiO₂, SiO, SiN, Al₂O₃, ZnO, MgO, TiN and a composite material of at least one of these materials and other element.
Claim 9
Dependent Claim
22 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer has a thickness of not larger than 200 Å.
Claim 10
Dependent Claim
21 words
The magnetoresistance effect element according to claim 9, wherein a thickness of said non-magnetic thin layer is at least 4 Å.