Patent EP0498604A1 successfully refreshed from Google Patents.
← Back to Patent Explorer
EP0498604A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device having a teos based spin-on-glass and process for making the same

Assignee: Motorola Solutions Inc
•
Filing: 1992-02-03
•
Granted: —
•
Expires: 2012-02-03
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In one form, a TEOS based spin-on-glass is made having on the order of 10% to 25% by volume of tetraethylorthosilicate, the equivalent of on the order of 0.1% to 3.0% by volume of 70% concentrated nitric acid, on the order of 60% to 90% by volume of alcohol, and the balance water. The spin-on-glass is applied to a semiconductor substrate and heated in order to densify the spin-on-glass.

Inventors

  • 👤 Papu D. Maniar

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 09:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6529; H10P14/6532; H10P14/69215; H10P14/6923; H10P14/6927

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 86 words
A process for making a semiconductor device comprising the steps of: providing a spin-on-glass having the composition of: a) on the order of 10% to 25% by volume of tetraethylorthosilicate; b) on the order of 0.1% to 3.0% by volume of the equivalent of 70% nitric acid; c) on the order of 60% to 90% by volume of alcohol; and d) balance water; providing a semiconductor substrate; coating the semiconductor substrate with the spin-on-glass; and heating the coated semiconductor substrate in order to densify the spin-on-glass.
Claim 2
Dependent Claim 66 words
A semiconductor device comprising: a semiconductor substrate; and a spin-on-glass coating overlying the semiconductor substrate, the spin-on-glass having the composition of: a) on the order of 10% to 25% by volume of tetraethylorthosilicate; b) on the order of 0.1% to 3.0% by volume of the equivalent of 70% nitric acid; c) on the order of 60% to 90% by volume of alcohol; and d) balance water.
Claim 3
Dependent Claim 63 words
The process of claim 1 or the device of claim 2 wherein the spin-on-glass has the composition of: a) on the order of 15 to 22% by volume of tetraethylorthosilicate; b) on the order of 0.2% to 1.3% by volume of the equivalent of 70% nitric acid; c) on the order of 70% to 90% by volume of alcohol; and d) balance water.
Claim 4
Dependent Claim 64 words
The process of claim 1 or the device of claim 2 wherein the spin-on-glass has the composition of: a) on the order of 15% to 22% by volume of tetraethylorthosilicate; b) on the order of 0.2% to 1.3% by volume of the equivalent of 70% nitric acid; c) on the order of 70% to 90% by volume of isopropyl alcohol; and d) balance water.
Claim 5
Dependent Claim 64 words
The process of claim 1 or the device of claim 2 wherein the spin-on-glass has the composition of: a) on the order of 16.8% to 19.0% by volume of tetraethylorthosilicate; b) on the order of 0.4% to 1.1% by volume of the equivalent of 70% nitric acid; c) on the order of 74.5% to 81.5% by volume of isopropyl alcohol; and d) balance water.
Claim 6
Dependent Claim 98 words
A process for forming a tetraethylorthosilicate (TEOS) based spin-on-glass comprising the steps of: diluting concentrated nitric acid with on the order of 6% to 10% by volume of de-ionized water and with on the order of 85% to 95% by volume of alcohol to form a dilute nitric acid solution; diluting tetraethylorthosilicate (TEOS) with on the order of 65% to 75% by volume of alcohol to form a dilute TEOS solution; and adding the dilute nitric acid solution to the dilute TEOS solution in a ratio of on the order of 1:1 to 1:2 to form a spin-on-glass.
Claim 7
Dependent Claim 31 words
The process of claim 6 wherein the step of diluting concentrated nitric acid comprises diluting concentrated nitric acid with on the order of 85% to 95% by volume of isopropyl alcohol.
Claim 8
Dependent Claim 29 words
The process of claim 6 wherein the step of diluting tetraethylorthosilicate (TEOS) comprises diluting tetraethylorthosilicate (TEOS) with on the order of 65% to 75% by volume of isopropyl alcohol.
Claim 9
Dependent Claim 21 words
The process of claim 6 wherein the step of diluting concentrated nitric acid comprises diluting the equivalent of 70% nitric acid.

References Cited (Backward Citations)

GB2062962A Cited
EP0130801A1 Cited
EP0206717A2 Cited
EP0206937A2 Cited
EP0280085A1 Cited
EP0313095A2 Cited

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag