Memories with unbalanced loads and with compensation
Abstract
Abstract The sense circuit recognizes the virgin or programmed status of cells in storage devices such as non-volatile memories, of the type with unbalanced loads, and comprises a sense amplifier (SA) having a first input (Y) connected to a number of selectable virgin reference cells (T vr1 , T vr2 ), and a second input (X) connected to a number of selectable matrix cells (T vm , T pm ). According to the invention, a compensatory programmed cell (NP) is connected with its source to ground, with its drain to the first input (Y) of the sense amplifier (SA), and with its gate to a voltage source (V cc ) which is high at least while the sense amplifier reads a selected matrix cell.
Inventors
- 👤 Luigi Pascucci
- 👤 Marco Olivo
Bibliographic Details
Claims Analysis
Total Claims: 3References Cited (Backward Citations)
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