Patent EP0474140A1 successfully refreshed from Google Patents.
EP0474140A1
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Process of forming capacitive insulating film
Assignee: NEC Corp
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Filing: 1991-08-30
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Granted: —
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Expires: 2011-08-30
Abstract
Abstract A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N 2 0) gas, said steps being performed in the same apparatus.
Inventors
- 👤 Satoshi C/O Nec Corporation Kamiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/662; H10P14/668; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/6339; H10P14/69394
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
59 words
A process of forming a capacitive insulating film, comprising the steps of: forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas; and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N 2 0) gas, said steps being performed in the same apparatus.
Claim 2
Dependent Claim
59 words
A process of forming a capacitive insulating film, comprising the steps of: forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas; and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N 2 0) gas, said steps being performed in the same apparatus.
Claim 3
Dependent Claim
21 words
A process according to claim 1, wherein hydrogen gas is used together with the oxygen gas and the nitrous oxide gas.
Claim 4
Dependent Claim
22 words
A process according to claim 1, wherein the reaction chamber is cleaned by plasma chemical reaction using fluorine series halogenide compound gas.
References Cited (Backward Citations)
EP0388957A2
Cited
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