EP0388957A2
Expired / Lapsed
EP
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Process for depositing tantalum oxide film and chemical vapor deposition system used therefore
Assignee: NEC Corp
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Filing: 1990-03-22
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Granted: —
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Expires: 2010-03-22
Abstract
Abstract A process of depositing a tantalum oxide film starts with preparing a reactor (34) with a vacuum chamber (35) associated with a plasma generating unit (32), a tantalum chloride gas and an oxygen-containing gas such as a dinitrogen monoxide gas are supplied to the vacuum chamber, and a plasma is produced in the vacuum chamber for plasma-assisted chemical reactions; a tantalum oxide film thus deposited decreases leakage current passing therethrough because the chemical composition thereof is close to the stoichiometry and undesirable pin holes and impurities are reduced.
Inventors
- 👤 Satoshi Kamiyama
- 👤 Masanobu Zenke
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C4/00; C23C4/12; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/662; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
120 words
A process of depositing a tantalum oxide film comprising the steps of a) preparing a reactor with a vacuum chamber associated with a plasma generating unit, and b) supplying a gaseous mixture containing tantalum compound to said vacuum chamber, characterized in that said gaseous mixture contains a tantalum chloride ard an oxygen-containing gas selected from the group consisting of a dinitrogen monoxide represented by the molecular formula of N₂O, a nitrogen oxide gas represented by the molecular formula of NO and an oxygen gas represented by the molecular formula of O₂, and in that said process further comprises the step of c) producing a plasma in said vacuum chamber so that plasma-assisted chemical reactions take place for a tantalum oxide.
Claim 2
Dependent Claim
120 words
A process of depositing a tantalum oxide film comprising the steps of a) preparing a reactor with a vacuum chamber associated with a plasma generating unit, and b) supplying a gaseous mixture containing tantalum compound to said vacuum chamber, characterized in that said gaseous mixture contains a tantalum chloride ard an oxygen-containing gas selected from the group consisting of a dinitrogen monoxide represented by the molecular formula of N₂O, a nitrogen oxide gas represented by the molecular formula of NO and an oxygen gas represented by the molecular formula of O₂, and in that said process further comprises the step of c) producing a plasma in said vacuum chamber so that plasma-assisted chemical reactions take place for a tantalum oxide.
Claim 3
Dependent Claim
18 words
A process as set forth in claim 1, in which said oxygen-containing gas is said dinitrogen monoxide gas.
Claim 4
Dependent Claim
113 words
A chemical vapor deposition system for producing a tantalum oxide comprising a) a reactor unit having a vacuum chamber, b) a gas source unit coupled to said vacuum chamber for supplying a gaseous mixture, characterized in that said gaseous mixture contains a tantalum chloride and an oxygen-containing gas selected from the group consisting of a dinitrogen monoxide represented by the molecular formula of N₂O, a nitrogen oxide gas represented by the molecular formula of NO and an oxygen gas represented by the molecular formula of O₂, and in that said chemical vapor deposition system further comprises c) a plasma generating unit for producing a plasma in said gaseous mixture in said vacuum chamber.
Claim 5
Dependent Claim
113 words
A chemical vapor deposition system for producing a tantalum oxide comprising a) a reactor unit having a vacuum chamber, b) a gas source unit coupled to said vacuum chamber for supplying a gaseous mixture, characterized in that said gaseous mixture contains a tantalum chloride and an oxygen-containing gas selected from the group consisting of a dinitrogen monoxide represented by the molecular formula of N₂O, a nitrogen oxide gas represented by the molecular formula of NO and an oxygen gas represented by the molecular formula of O₂, and in that said chemical vapor deposition system further comprises c) a plasma generating unit for producing a plasma in said gaseous mixture in said vacuum chamber.
References Cited (Backward Citations)
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