Patent EP0468758A1 successfully refreshed from Google Patents.
EP0468758A1
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EP
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Method of forming insulating films, capacitances, and semiconductor devices
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-07-24
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Granted: —
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Expires: 2011-07-24
Abstract
Abstract Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom% or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/06; C23C14/0641; C23C14/0652; C23C14/08; C23C14/083; C23C14/088; H10D64/0134; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
53 words
A method of forming an insulating oxide film comprising: disposing a substrate to be coated and a target made of a metal or an oxide thereof in a sputtering apparatus; and sputtering an oxide film on said substrate in an atmospheric gas including an oxidizing gas at a proportion not lower than 75%.
Claim 2
Dependent Claim
27 words
A method as claimed in claim 1, wherein said target comprises oxide selected from the group consisting of tantalum oxide, titanium oxide, barium titanate and lead titanate.
Claim 3
Dependent Claim
22 words
A method as claimed in claim 1, wherein said target is a metal selected from the group consisting of titanium and tantalum.
Claim 4
Independent Claim
29 words
A method as claimed in any one of claims 1 to 3, wherein said oxidizing gas is a gas selected from the group consisting of oxygen, N₂O, and O₃.
Claim 5
Independent Claim
19 words
A method as claimed in any one of claims 1 to 4, wherein said atmospheric gas is pure oxygen.
Claim 6
Independent Claim
44 words
A method of forming insulating nitride films comprising: disposing a substrate to be coated and a target in a sputtering apparatus; and sputtering a nitride film on said substrate in an atmospheric gas including a nitrogen-containing gas at a proportion not lower than 50%.
Claim 7
Dependent Claim
25 words
A method as claimed in claim 6, wherein said target comprises nitride selected from the group consisting of silicon nitride, tantalum nitride, and titanium nitride.
Claim 8
Dependent Claim
26 words
A method as claimed in claim 6 or claim 7, wherein said nitrogen-containing gas is a gas selected from the group consisting of ammonia and N₂.
Claim 9
Independent Claim
24 words
A method as claimed in any one of claims 1 to 4 and 6 to 8, wherein said atmospheric gas includes a halogen-containing gas.
Claim 10
Dependent Claim
30 words
A method as claimed in claim 9, wherein said halogen-containing gas is a gas selected from the group consisting of NF₃, N₂F₄, HF, chloro-fluoro carbon, F₂, Cl,₂, HCl, and CCl₄.
Claim 11
Independent Claim
15 words
A method as claimed in any preceding claim, wherein said sputtering is RF magnetron sputtering.
Claim 12
Independent Claim
67 words
A method of forming a capacitor comprising: disposing a substrate having an upper surface as a lower electrode and a target of a metal or a metal oxide in a sputtering apparatus; sputtering an oxide film on the lower electrode of said substrate in an atmospheric gas including an oxidizing gas at a proportion not lower than 75%; and forming an upper electrode on said oxide film.
Claim 13
Independent Claim
63 words
A method of forming a capacitor comprising: disposing a substrate having an upper surface as a lower electrode and a target of a nitride in a sputtering apparatus; sputtering a nitride film on the lower electrode of said substrate in an atmospheric gas including a nitrogen-containing gas at a proportion not lower than 75%; and forming an upper electrode on said nitride film.
Claim 14
Dependent Claim
27 words
A method as claimed in claim 12 or claim 13, wherein said lower electrode, said film and said upper electrode constitute a capacitor of an integrated circuit.
Claim 15
Independent Claim
29 words
A method as claimed in any one of claims 12 to 14, wherein said lower electrode, said film and said upper electrode constitute a capacitor of a dynamic memory.
References Cited (Backward Citations)
US4849081A
Cited
FR2640078A1
Cited
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