Patent EP0453372A1 successfully refreshed from Google Patents.
EP0453372A1
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Infrared ray sensor
Assignee: Terumo Corp
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Filing: 1991-04-18
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Granted: —
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Expires: 2011-04-18
Abstract
Abstract The infrared ray sensor includes a sensor substrate (2) formed of an infrared ray transmitting material and having a first surface (2a) and a second surface (2b) which is in opposed relation to the first surface (2a), an infrared ray reflecting film (4) provided on the first surface (2a) of the sensor substrate (2), infrared ray detecting elements (7A, 7B) provided on the second surface (2b) of the sensor substrate (2), and an infrared ray transmitting window portion (3) formed in the infrared ray reflecting film (4) in relation to the infrared ray detecting elements (7A, 7B). The infrared ray which enters the inhared ray transmitting window portion (3) passes through the sensor substrate (2) and is then made incident on the infrared ray detecting elements (7A, 7B). Bridges (6A, 6B) are formed on the second surface (2b) of the sensor substrate (2). Each of the bridges (6A, 6B) is a silicon oxynitride film having a single layer configuration.
Inventors
- 👤 Takehisa C/O Terumo K.K. Mori
- 👤 Hisanaga C/O Terumo K.K. Kiba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 11:50
CPC Classifications
G; G01; G01K; G01K11/00; G01K11/30; G01J; G01J5/00; G01J5/02; G01J5/0225; G01J5/023; G01J5/024; G01J5/04; G01J5/041; G01J5/045; G01J5/046; G01J5/06; G01J5/064; G01J5/08; G01J5/0831; G01J5/0846; G01J5/10; G01J5/20; H; H10; H10F; H10F71/00; H10F71/121; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10F77/30; H10F77/40; H10F77/413; H10F77/50; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
134 words
An infrared ray sensor including a sensor substrate (2) formed of an infrared ray transmitting material and having a first surface (2a) and a second surface (2b) which is in opposed relation to said first surface (2a), and infrared ray detecting elements (7A, 7B) provided on said second surface (2b) of said sensor substrate (2), the improvement being characterized by the inclusiton of an infrared ray reflecting film (4) provided on said first surface (2a) of said sensor substrate (2), and an infrared ray transmitting window portion (3) formed in said infrared ray reflecting film (4) in relation to said infrared ray detecting element (7B) so as to make the infrared ray which enters said infrared ray transmitting window portion (3) incident on said infrared ray detecting element (7B) through said sensor substrate (2).
Claim 2
Dependent Claim
64 words
An infrared ray sensor according to claim 1, wherein two or more of said infrared ray detecting elements are provided on said second surface of said sensor substrate, and wherein said infrared ray transmitting window portion is formed at a position where it allows the infrared ray to enter a specified infrared ray detecting element alone in said plurality of infrared ray detecting elements.
Claim 3
Dependent Claim
40 words
An infrared ray sensor according to claim 2, further comprising a plurality of bridges formed on said second surface of said sensor substrate, said infrared ray detecting elements being respectively provided on said plurality of bridges one on each bridge.
Claim 4
Dependent Claim
37 words
An infrared ray sensor according to either of claims 1 to 3, further comprising electrode pads formed on said second surface of said sensor substrate, said electrode pads being electrically connected to said infrared ray detecting elements.
Claim 5
Dependent Claim
62 words
An infrared ray sensor according to claim 4, further comprising a terminal substrate having conductive layers at positions corresponding to said electrode pads on said sensor substrate and electrode terminals respectively connected to said conductive layers, said sensor substrate being fixed to said terminal substrate in a state wherein said electrode pads are joined to said conductive layers of said terminal substrate.
Claim 6
Dependent Claim
44 words
An infrared ray sensor according to claim 5, wherein a surface of said terminal substrate to which said sensor substrate is joined has a hole portion, the surrounding of said hole portion being sealed when said sensor substrate is joined to said terminal substrate.
Claim 7
Dependent Claim
22 words
An infrared ray sensor according to either of claims 1 to 6, wherein said infrared ray reflecting film comprises a metal film.
Claim 8
Dependent Claim
20 words
An infrared ray sensor according to either of claims 1 to 7, wherein said infrared ray transmitting material comprises silicon.
Claim 9
Dependent Claim
20 words
An infrared ray sensor according to either of claims 1 to 7, wherein said infrared ray transmitting material comprises germanium.
Claim 10
Dependent Claim
22 words
An infrared ray sensor according to either of claims 3 to 9, wherein said bridges are made of a silicon oxynitride film.
Claim 11
Dependent Claim
27 words
An infrared ray sensor according to claim 10, wherein a composition of said silicon oxynitride film is changed in accordance with the material of said sensor substrate.
Claim 12
Dependent Claim
28 words
An infrared ray sensor according to claim 11, wherein said silicon oxynitride film has a thickness which is varied in accordance with the material of said sensor substrate.
Claim 13
Dependent Claim
23 words
An infrared ray sensor according to claim 12, wherein said silicon oxynitride film has a thickness ranging from 0. 1 to 50 µm.
Claim 14
Dependent Claim
39 words
An infrared ray sensor comprising: a sensor substrate formed of a semiconductor material; a bridge formed of a silicon oxynitride film, said bridge being provided on said sensor substrate; and an infrared ray detecting element provided on said bridge.
Claim 15
Independent Claim
66 words
A method of manufacturing an infrared ray sensor, comprising the steps of; forming a silicon oxynitride film by causing a reactive gas to flow on a semiconductor substrate; patterning said silicon oxynitride film; and forming a hole portion by selectively removing a portion of said semiconductor substrate located below said patterned silicon oxynitride film so as to form a bridge made of the silicon oxynitride film.
Claim 16
Dependent Claim
45 words
A method of manufacturing an infrared ray sensor according to claim 15, wherein a composition of said silicon oxynitride film is changed in accordance with a coefficient of thermal expansion of said semiconductor substrate by changing a gas flow rate ratio of said reactive gas.
References Cited (Backward Citations)
EP0214289B1
Cited
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