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EP0441374A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device provided with capacitors

Assignee: Toshiba Corp
•
Filing: 1991-02-07
•
Granted: —
•
Expires: 2011-02-07
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Abstract

Abstract A semiconductor device provided with capacitors comprising a dielectric layer (22) arranged on a semiconductor substrate (30), a pair of upper and lower electrodes (21, 23) opposed to each other with the dielectric layer (22) interposed between them, and a pickup portion (24 or 25) extending continuous from each electrode (21 or 23), wherein the pattern edge of the upper electrode (23) from which its pickup portion (25) is excluded is positioned inside that of the lower electrode (21) from which its pickup portion (24) is excluded. The area of the upper electrode (23) pattern from which its pickup portion (25) is excluded is made smaller than that of the lower electrode (21) pattern from which its pickup portion (24) is excluded, so as to reduce the leak current of the capacitor.

Inventors

  • 👤 Yasukazu C/O Intellectual Property Div. Mase
  • 👤 Masahiro C/O Intellectual Property Div. Abe

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 20:10
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 89 words
A semiconductor device provided with capacitors characterized by comprising: a dielectric layer (22) arranged on a semiconductor substrate (30); a pair of upper and lower electrodes (21, 23) opposed to each other with the dielectric layer (22) interposed between them; and a pickup portion (24 or 25) extending continuous from each electrode (21 or 23); wherein the pattern edge of the upper electrode (23) from which its pickup portion (25) is excluded is positioned inside that of the lower electrode (21) from which its pickup portion (24) is excluded.
Claim 2
Dependent Claim 40 words
The semiconductor device provided with capacitors according to claim 1, characterized in that the interval by which the pattern edge of the upper electrode (23) is separated inward from that of the lower electrode (21) is longer than 1.0 µm.
Claim 3
Dependent Claim 35 words
The semiconductor device provided with capacitors according to claim 1, characterized in that the dielectric layer (22) is a layers-insulating one interposed between a first and a second wiring layer laminated on the semiconductor substrate.
Claim 4
Dependent Claim 36 words
The semiconductor device provided with capacitors according to claim 3, characterized in that the lower electrode (21) is included in the first wiring layer and the upper electrode (23) is included in the second wiring layer.
Claim 5
Dependent Claim 34 words
The semiconductor device provided with capacitors according to claim 3, characterized in that the dielectric layer (22) is a pile of silicon oxide or silicon nitride formed by the plasma chemical vapor deposition manner.
Claim 6
Dependent Claim 27 words
The semiconductor device provided with capacitors according to claim 4, characterized in that the upper and lower electrodes (21, 23) are made of polycrystal silicon or tungsten.

References Cited (Backward Citations)

US4654690A Cited
EP0192989A2 Cited
US4599678A Cited
US4638400A Cited

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