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EP0432049A1
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MOS blow-out fuse with programmable tunnel oxide
Assignee: STMicroelectronics SA
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Filing: 1990-12-06
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Granted: —
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Expires: 2010-12-06
Abstract
Abstract MOS blow-out fuse with programmable tunnel oxide. Such a fuse is composed of a tunnel oxide EEPROM memory cell, and of an EEPROM memory plane whose tunnel oxide can, at a given moment of the application, be blown by switching a steep front in place of a slow front of a program/erase voltage Vpp. Such a fuse can be used in all MOS integrated circuits, and is addressed in particular at applications of memory-card type. <IMAGE>
Inventors
- 👤 Laurent Sourgen
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 12:52
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/30; G11C17/00; G11C17/14; G11C17/16; H; H03; H03K; H03K17/00; H03K17/10; H03K17/102; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
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References Cited (Backward Citations)
US3576549A
Cited
FR2527805A1
Cited
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