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EP0421397A1
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EP
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Diamond semiconductor device and method of manufacture
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-10-04
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Granted: —
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Expires: 2010-10-04
Abstract
Abstract A semiconductor device utilizing a non-doped diamond layer (2) between a substrate (1) and an active diamond layer (3). Such a structure decreases the resistivity and increases the carrier density. Further, when contacts (4, 5) are formed on the active layer (3), this layer structure reduces reverse leak current.
Inventors
- 👤 Tunenobu C/O Itami Works Of Sumitomo Kimoto
- 👤 Tadashi C/O Itami Works Of Sumitomo Tomikawa
- 👤 Nobuhiko C/O Itami Works Of Sumitomo Fujita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:34
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/80; H10D62/83; H10D62/8303; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/2907; H10P14/2908; H10P14/2921; H10P14/2923; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3444
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
27 words
A semiconductor device comprising: a substrate; a non-doped diamond thin film formed on said substrate; and a diamond active layer formed on the non-doped diamond thin film.
Claim 2
Dependent Claim
27 words
A semiconductor device comprising: a substrate; a non-doped diamond thin film formed on said substrate; and a diamond active layer formed on the non-doped diamond thin film.
Claim 3
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said substrate is a diamond substrate.
Claim 4
Dependent Claim
17 words
A semiconductor device as claimed in claim 1, further comprising contacts formed on said diamond passive layer.
Claim 5
Dependent Claim
22 words
A semiconductor device as claimed in claim 1, wherein said non-doped diamond thin film has a thickness of at least 100 A.
Claim 6
Dependent Claim
27 words
A semiconductor device as claimed in claim 1, wherein said non-doped diamond thin film has a thickness in the range of from 50 A to 1000 A.
Claim 7
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said substrate is a Si substrate.
Claim 8
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said substrate is a metal substrate.
Claim 9
Independent Claim
30 words
A method for forming a semiconductor device, comprising the steps of: growing a non-doped diamond layer on a substrate; and depositing a diamond active layer on said non-doped diamond layer.
Claim 10
Independent Claim
30 words
A method for forming a semiconductor device, comprising the steps of: growing a non-doped diamond layer on a substrate; and depositing a diamond active layer on said non-doped diamond layer.
Claim 11
Dependent Claim
18 words
A method as claimed in claim 8, further comprising the step of forming contacts on said active layer.
References Cited (Backward Citations)
EP0262601A2
Cited
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