Patent EP0397265A1 successfully refreshed from Google Patents.
EP0397265A1
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EP
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Bipolar transistor arrangement with distortion compensation
Assignee: Koninklijke Philips NV
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Filing: 1990-05-07
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Granted: —
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Expires: 2010-05-07
Abstract
Abstract The invention relates to a bipolar transistor arrangement with distortion compensation to compensate for the distortion component (Id) in the collector current (Io + Id) of a transistor (T1), which component is caused by the logarithmic base-emitter voltage thereof. In accordance with the invention a sub-current (Is) proportional to the emitter current (I + Ie) is generated, which sub-current is fed through an element (7) comprising at least one semiconductor junction. By means of a voltage-to-current converter (8) the logarithmic voltage appearing across this element is converted into a correction current (Ir) proportional to the distortion component (Id) and is applied to the collector of the transistor (T1) in order to compensate for the distortion component (Id) in a load circuit (Rc) connected to the collector. The invention is suitable for use in voltage-to-current converters formed by means of bipolar transistors.
Inventors
- 👤 Ivo Wilhelmus Johannes Marie Rutten
- 👤 Robert Emile Johan Van De Grift
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 02:14
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/32; H03F1/3211
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
126 words
A bipolar transistor arrangement with distortion compensation, the arrangement comprising a bipolar transistor with d.c. bias means, the collector of said transistor constituting a collector terminal for the connection of a load circuit and the base of said transistor constituting a base terminal for the connection of a signal voltage source, characterized by means for in operation supplying a sub-current which is proportional to the current in the emitter of the transistor, at least one element having a semiconductor junction for supplying a voltage which depends on said sub-current, and conversion means for supplying a current which is proportional to said voltage to the collector terminal of the transistor in order to compensate for that part of the collector current which depends uon the base-emitter voltage.
Claim 2
Dependent Claim
126 words
A bipolar transistor arrangement with distortion compensation, the arrangement comprising a bipolar transistor with d.c. bias means, the collector of said transistor constituting a collector terminal for the connection of a load circuit and the base of said transistor constituting a base terminal for the connection of a signal voltage source, characterized by means for in operation supplying a sub-current which is proportional to the current in the emitter of the transistor, at least one element having a semiconductor junction for supplying a voltage which depends on said sub-current, and conversion means for supplying a current which is proportional to said voltage to the collector terminal of the transistor in order to compensate for that part of the collector current which depends uon the base-emitter voltage.
Claim 3
Dependent Claim
89 words
A bipolar transistor arrangement as claimed in Claim 1, characterized in that the means for supplying the sub-current comprise a further bipolar transistor of the same conductivity type as and having a smaller emitter area than said one transistor, the base-emitter junctions of said one and said further transistor being arranged in parallel, thereby constituting a common base and emitter terminal, the collector of said further transistor constituting a further collector terminal, to which the at least one element having a semiconductor junction and the conversion means are connected.
Claim 4
Dependent Claim
177 words
A bipolar transistor arrangement as claimed in Claim 2, characterized in that said one transistor constitutes a first branch of a voltage to current converter, of which a second branch is constituted by a bipolar transistor of the same conductivity type, to which a similar circuit comprising a further bipolar transistor having a smaller emitter area, at least one element having a semiconductor junction and d.c. bias means are connected, the d.c. bias means comprising a current-reference circuit which in each branch is arranged in series with the common emitter terminals of said one and said further transistor, which emitter terminals are interconnected by a first impedance, and the conversion means comprising a further voltage-to-current converter comprising first and second voltage input terminals, which are connected to the further collector terminals of the further transistors respectively, and comprising at least one current output terminal to compensate, in at least one of the branches of the voltage to current converter, for that part of the collector current which depends upon the base emitter voltage of the one transistor.
Claim 5
Dependent Claim
131 words
A bipolar transistor arrangement as claimed in Claim 3, characterized in that the further voltage-to-current converter comprises a first and a second bipolar transistor of the same conductivity type as said one and further further transistor, the bases of said first and second transistors being connected to the further collector terminals of the further transistors associated respectively with the first and the second branch of the one voltage-to-current converter, a current-reference circuit being arranged in series with each of the emitters of the first and the second transistor, which emitters are interconnected via an impedance, and at least one of the first and the second transistors having its collector connected respectively to the collector terminal of the one transistor in the second and the first branch of the one voltage-to-current converter.
Claim 6
Dependent Claim
182 words
A bipolar transistor arrangement as claimed in Claim 3, characterized in that said one transistor in a branch of the one voltage-to-current converter comprises two bipolar sub-transistors of the same conductivity type, the sum of the emitter areas of the two sub-transistors being equal to the emitter area of the originally one transistor, which sub-transistors have their base-emitter junctions arranged in parallel with one another, the further voltage-to-current converter comprising a first and a second bipolar transistor of the same conductivity type as said one and said further transistors, said first and said second transistor having their bases connected to the further collector terminals of the further transistors associated respectively with the first and the second branch of the one voltage-to-current converter, the emitters being connected to the collectors of the two sub-transistors, which emitters are interconnected via an impedance, and the collector of the first and the second transistor, in whose collector-emitter paths in operation by the currents from the one and the further voltage-to-current converter flow in opposite directions constituting the collector terminals for the connection of the load circuit.
Claim 7
Dependent Claim
59 words
A bipolar transistor arrangement as claimed in Claim 5, characterized in that the other branch of the one voltage-to-current converter, similarly to the one branch, comprises two bipolar sub-transistors and a further voltage-to-current converter connected thereto and comprising a first and a second bipolar transistor and an impedance, and having a collector terminal for connection of the load circuit.
Claim 8
Dependent Claim
99 words
A bipolar transistor arrangement as claimed in Claim 4, characterized in that the at least one elements having a semiconductor junction comprises a series arrangement of m diode or m diode-connected transistors, m being an integer larger than 1, the emitter areas of said one transistor being equal as far as possible and the emitter areas of the further transistors being equal as far as possible, and the respective impedances of the one and the further voltage to current converter comprise a first and a second resistor respectively, whose resistance values are in a ratio of 1 : m.
Claim 9
Dependent Claim
90 words
A bipolar transistor arrangement as claimed in Claim 5 or 6, characterized in that the at least one element havinng a semiconductor junction comprise a series arrangement of m diodes or m diode-connected transistors, m being an integer larger than 1, the emitter areas of the one and the further transistors being in a ratio of 2n:1, n being a positive number, and the impedances of the one and the further voltage-to-current converter comprising a first and a second resistor respectively whose resistance values are in a ratio of 1:(1+2n)m/n.
Claim 10
Dependent Claim
80 words
A bipolar transistor arrangement as claimed in any one of the preceding Claims, characterized in that the collector terminal for the connection of the load circuit is connected to the common emitter terminal of a differential transistor pair, the collector of one of the transistors of said pair constituting an output terminal for the connection of the load circuit and the bases of said transistors constituting terminals for applying a control voltage for controlling the current to the output terminal.
Claim 11
Dependent Claim
34 words
A bipolar transistor arrangement as claimed in Claim 9, characterized in that a plurality of differential transistor pairs are connected to said collector terminal for controlling the current to the output terminal in steps.
Claim 12
Dependent Claim
32 words
A bipolar transistor arrangement as claimed in Claim 10, characterized in that the transistor which forms the collector terminal for the connection of the load circuit is constructed as a multi-collector transistor.
References Cited (Backward Citations)
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