Patent US6788029B1 successfully refreshed from Google Patents.
Patent EP0379301A1 successfully refreshed from Google Patents.
EP0379301A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of stripping organic material
Assignee: Fujitsu Ltd
•
Filing: 1990-01-10
•
Granted: —
•
Expires: 2010-01-10
Abstract
Abstract In a method of ashing an organic film on a supporting substrate (8), mounted in a working chamber (6), a gaseous mixture containing oxygen and a halogen is subjected to an ionization process in a plasma chamber (4) from which neutral active species of a resulting plasma can pass into the working chamber (6). Water vapour is introduced into the working chamber at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber, thereby to prevent such free halogen atoms from contacting the organic film. Such a method may be used, for example, to remove an organic resist from a semiconductor wafer during the fabrication of semiconductor devices, and can enable the resist to be removed at an acceptably high rate at a desirably low temperature, without causing significant contamination or etching of the underlying wafer.
Inventors
- 👤 Shuzo Fujimura
- 👤 Keisuke Shinagawa
- 👤 Kenichi Hikazutani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 21:08
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32192; H01J37/32431; H01J37/3244; H01J37/32715; H01J37/32798; H01J37/32816; H01J37/32834; H10P72/00; H10P72/04; H10P72/0402
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
112 words
A method of ashing an organic film on a supporting substrate (8), mounted in a working chamber (6), in which method a gaseous mixture containing oxygen and a halogen is subjected to an ionization process in a plasma chamber (4) from which neutral active species of a resulting plasma can pass into the said working chamber (6); characterised in that water vapour is introduced into the said working chamber at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber, thereby to prevent such free halogen atoms from contacting the said organic film.
Claim 2
Independent Claim
112 words
A method of ashing an organic film on a supporting substrate (8), mounted in a working chamber (6), in which method a gaseous mixture containing oxygen and a halogen is subjected to an ionization process in a plasma chamber (4) from which neutral active species of a resulting plasma can pass into the said working chamber (6); characterised in that water vapour is introduced into the said working chamber at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber, thereby to prevent such free halogen atoms from contacting the said organic film.
Claim 3
Dependent Claim
92 words
A process for stripping an organic material, which comprises forming gases including a gas containing oxygen and a gas containing a halogen into plasma in a plasma chamber, supplying an active species of the halogen in said gas formed plasma to a reaction chamber to strip the organic material in said reaction chamber, wherein at least one mole of water vapor based upon two moles of the dissociated halogen atom is introduced into said reaction chamber, and said active species of the halogen are removed before contact thereof with said organic material.
Claim 4
Dependent Claim
92 words
A process for stripping an organic material, which comprises forming gases including a gas containing oxygen and a gas containing a halogen into plasma in a plasma chamber, supplying an active species of the halogen in said gas formed plasma to a reaction chamber to strip the organic material in said reaction chamber, wherein at least one mole of water vapor based upon two moles of the dissociated halogen atom is introduced into said reaction chamber, and said active species of the halogen are removed before contact thereof with said organic material.
Claim 5
Dependent Claim
21 words
A process as claimed in claim 2, wherein the gases fed to the plasma chamber are oxygen and a fluorine-containing gas.
Claim 6
Dependent Claim
37 words
A process as claimed in claim 3, wherein the fluorine-containing gas is at least one compound selected from the group consisting of F₂, CF₄, C₂F₆, NF₃, SF₆, ClF₃, CHF₃, CClF₃, C₂ClF₅, C₂Cl₂F₄, CCl₂F₂, CBrF₃, and xenon fluoride.
Claim 7
Dependent Claim
17 words
A process as claimed in claim 2, wherein the plasma is generated by microwave or radio frequency.
Claim 8
Dependent Claim
45 words
A process as claimed in claim 2, wherein O₂ and a fluorine-containing gas are used as the gas fed to the plasma chamber in an amount of a fluorine-containing gas/ (O₂ + a fluorine-containing gas) of 0.05 to 0.3 in terms of a mole ratio.
Claim 9
Dependent Claim
29 words
A process as claimed in claim 6, wherein the ratio of a fluorine-containing gas/ (O₂ + a fluorine-containing gas) is 0.1 to 0.25 in terms of a mole ratio.
Claim 10
Dependent Claim
46 words
A process as claimed in claim 2, wherein O₂ and a fluorine-containing gas are used as the gases fed to the plasma chamber and the water vapor is introduced in an amount of 1.2 to 2.4 moles based upon 2 moles of the dissociated halogen atom.
Claim 11
Dependent Claim
31 words
A process as claimed in claim 2, wherein the organic material is a resist coated on a wafer having a silicon dioxide or silicon nitride layer on the top surface thereof.
Claim 12
Dependent Claim
37 words
A process as claimed in claim 2, wherein the water vapor is generated from a water vessel by bubbling with at least one carrier gas selected from the group consisting of nitrogen, oxygen, hydrogen, argon, and helium.
Claim 13
Independent Claim
44 words
A device for stripping an organic material comprising: a reaction chamber provided with a stage for placing the organic material to be treated; a plasma generating means; a gas introducing inlet; a shower head; a water vapor inlet means; and a gas evacuating conduit.
Claim 14
Independent Claim
44 words
A device for stripping an organic material comprising: a reaction chamber provided with a stage for placing the organic material to be treated; a plasma generating means; a gas introducing inlet; a shower head; a water vapor inlet means; and a gas evacuating conduit.
Claim 15
Dependent Claim
53 words
A device as claimed in claim 11, wherein the device comprises a plasma chamber to which a gas containing oxygen and a gas containing a halogen are fed and a reaction chamber to which a water vapor is introduced, whereby the water-vapor is reacted with a halogen atom derived from the halogen-containing gas.
Claim 16
Dependent Claim
19 words
A device as claimed in claim 11, wherein the device further comprises a water vessel provided with a heater.
Claim 17
Dependent Claim
16 words
A device as claimed in claim 11, wherein the device further comprises a carrier gas bomb.
Claim 18
Dependent Claim
26 words
A device as claimed in claim 11, wherein a plurality of the inlets for the water vapor is provided at the periphery of the reaction chamber.
Claim 19
Dependent Claim
28 words
A device as claimed in claim 11, wherein the water vapor inlet means in the form of a slit elongated over the entire periphery of the reaction chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.