EP0237078A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Downstream microwave plasma processing apparatus having an improved coupling structure between microwave and plasma
Assignee: Fujitsu Ltd
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Filing: 1987-03-13
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Granted: —
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Expires: 2007-03-13
Abstract
Abstract A downstream microwave plasma processing apparatus useful in fabricating an integrated circuit semiconductor device comprises a wave guide (1), a microwave transmitting window (3) disposed perpendicularly to an electric field of microwaves propagating in the wave guide, a plasma generation chamber (9) partially defined by the window, and a reaction chamber (10) adjacent to the plasma generation region and separated therefrom by a shielding member (6) of mesh or perforated foil. With this configuration of the apparatus, the microwaves are coupled with a plasma generated in the plasma generation chamber through the microwave transmitting window, and are confined therein by the shielding member. Radicals of a short-life reactive gas generated in the plasma pass through the shielding member and impinge on to an object placed in the reaction chamber, whereby a uniform and effective downstream plasma etching or ashing is effected
Inventors
- 👤 Shuzo C/O Fujitsu Limited Patent Dept. Fujimura
- 👤 Satoru C/O Fujitsu Limited Patent Dept. Mihara
- 👤 Toshimasa C/O Fujitsu Limited Patent Dept. Kisa
- 👤 Yasumari C/O Fujitsu Limited Patent Dept. Motoki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 18:42
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32009; H01J37/32357; H01J37/32715; H10; H10P; H10P72/00; H10P72/04; H10P72/0402
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
138 words
A plasma processing apparatus for treating a semiconductor substrate (11), employing microwave and reactive gas, said apparatus comprising: a microwave power source (12); a wave guide (1) for transmitting microwaves generated in said microwave power source; a microwave transmitting window (3) disposed in a wall of said wave guide, disposed perpendicular to an electric field of said microwaves in said wave guide; a vacuum processing vessel (4), a portion of which is defined by said microwave transmitting window; a shielding member (6) having a plurality of openings, separating the inside space of said processing vessel into a plasma generation chamber (9) and a reaction chamber (10), said plasma generation chamber being defined by said microwave transmitting window and said shielding member; and a stage (5) disposed in said reaction chamber facing said shielding means, for mounting said substrate.
Claim 2
Dependent Claim
138 words
A plasma processing apparatus for treating a semiconductor substrate (11), employing microwave and reactive gas, said apparatus comprising: a microwave power source (12); a wave guide (1) for transmitting microwaves generated in said microwave power source; a microwave transmitting window (3) disposed in a wall of said wave guide, disposed perpendicular to an electric field of said microwaves in said wave guide; a vacuum processing vessel (4), a portion of which is defined by said microwave transmitting window; a shielding member (6) having a plurality of openings, separating the inside space of said processing vessel into a plasma generation chamber (9) and a reaction chamber (10), said plasma generation chamber being defined by said microwave transmitting window and said shielding member; and a stage (5) disposed in said reaction chamber facing said shielding means, for mounting said substrate.
Claim 3
Dependent Claim
17 words
A plasma processing apparatus according to claim 1, wherein said shielding member (6) is a metallic mesh.
Claim 4
Dependent Claim
20 words
A plasma processing apparatus according to claim 1, wherein said shielding member (6) is made from a perforated metal foil.
Claim 5
Dependent Claim
26 words
A plasma processing apparatus according to any preceding claim, wherein said reaction chamber (10) spatially adjoins said plasma generation chamber (9) through said shielding member (6).
Claim 6
Dependent Claim
22 words
A plasma processing apparatus according to any preceding claim, wherein the material of said microwave transmitting window (3) is a dielectric material.
Claim 7
Dependent Claim
14 words
A plasma processing apparatus according to claim 5, wherein said dielectric material is silica.
Claim 8
Dependent Claim
14 words
A plasma processing apparatus according to claim 5, wherein said dielectric material is ceramic.
Claim 9
Dependent Claim
16 words
A plasma processing apparatus according to any preceding claim, wherein said reactive gas comprises oxygen (O₂).
Claim 10
Dependent Claim
24 words
A plasma processing apparatus according to any preceding claim, wherein said stage is moveable to reciprocate in a direction perpendicular to said shielding member.
Claim 11
Dependent Claim
26 words
A plasma processing apparatus according to any preceding claim, wherein dimensions of an object to be processed are smaller than those of said microwave transmitting window.
Claim 12
Dependent Claim
25 words
A plasma processing apparatus according to any preceding claim, wherein said plasma generation chamber has a gas inlet (8) for introducing said reactive gas therein.
Claim 13
Dependent Claim
33 words
A plasma processing apparatus according to any preceding claim, wherein said processing vessel has an exhaust outlet (7) in a part other than said plasma generation chamber, for evacuating said processing vessel therethrough.
References Cited (Backward Citations)
No citation records indexed.
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