EP0336026A1
Expired / Lapsed
EP
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Fabrication of customized integrated circuits
Assignee: QUICK TECHNOLOGIES LTD.
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Filing: 1988-04-05
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Granted: —
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Expires: 2008-04-05
Abstract
Abstract A technique for production of customized integrated circuits comprising the steps of providing an integrated circuit blank having at least first and second metal layers (410, 412) including portions arranged for selectable removal, to provide desired customization of said integrated circuit blank, and thereafter etching at least said first metal layer (410 or 412) to customize said integrated circuit blank.
Inventors
- 👤 Zvi Orbach
- 👤 Meir Israel Janai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 16:09
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/90; H10P; H10P50/00; H10P76/00; H10P76/20; H10P76/204; H10W20/01; H10W20/031; H10W20/067; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12542; Y10T428/12611; Y10T428/12618; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
56 words
A technique for production of customized integrated circuits comprising the steps of: providing an integrated circuit blank having at least first and second metal layers (410,412) including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit blank.
Claim 2
Dependent Claim
56 words
A technique for production of customized integrated circuits comprising the steps of: providing an integrated circuit blank having at least first and second metal layers (410,412) including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit blank.
Claim 3
Dependent Claim
30 words
A technique according to claim 1 and wherein said etching step comprises simultaneous etching of all desired locations on each of said at least said first metal layer (410, 412).
Claim 4
Dependent Claim
34 words
A technique according to claim 1 or claim 2 and wherein said etching step comprises the step of simultaneously etching said first and second metal layers (410, 412) to customize said integrated circuit blank.
Claim 5
Dependent Claim
84 words
A technique for production of customized integrated circuits comprising the steps of: providing an integrated circuit blank having at least one metal layer (410, 412); etching said at least one metal layer (410, 412) to define a pattern of conductors including portions arranged for selectable removal; and thereafter etching said at least one metal layer (410, 412) a second time to customize said integrated circuit blank by selectable removal of said at least one metal layer (410, 412) at selected ones of said portions.
Claim 6
Dependent Claim
84 words
A technique for production of customized integrated circuits comprising the steps of: providing an integrated circuit blank having at least one metal layer (410, 412); etching said at least one metal layer (410, 412) to define a pattern of conductors including portions arranged for selectable removal; and thereafter etching said at least one metal layer (410, 412) a second time to customize said integrated circuit blank by selectable removal of said at least one metal layer (410, 412) at selected ones of said portions.
Claim 7
Dependent Claim
42 words
A technique according to claim 4 and wherein said step of etching said at least one metal layer (410, 412) a second time comprises simultaneous etching of all desired locations on each of said at least one metal layers ( 410, 412).
Claim 8
Dependent Claim
36 words
A technique according to claim 4 and also comprising the step of depositing a non-metallic layer (436) over said at least one metal layer prior to etching said at least one metal layer a second time.
Claim 9
Dependent Claim
41 words
A technique according to claim 6 and wherein said step of etching said at least one metal layer (410, 412) a second time comprises simultaneous etching of all desired locations on each of said at least one metal layers (410, 412).
Claim 10
Dependent Claim
56 words
A technique according to any of claims 1 - 3 and wherein said step of providing includes the step of forming an etch resistant layer (440) over said integrated circuit blank using a mask which defines etchable windows (442) over all portions of said first metal layer sought to be removed in a predetermined customization configuration.
Claim 11
Dependent Claim
57 words
A technique according to any of claims 4 - 7 and wherein said step of providing includes the step of forming an etch resistant layer (440) over said integrated circuit blank using a mask which defines etchable windows over all portions of said at least one metal layer sought to be removed in a predetermined customization configuration.
Claim 12
Dependent Claim
65 words
A technique according to any of claims 1 - 3 and also comprising the step of forming an etch resistant layer (440) over said integrated circuit blank using an etchable window mask which defines etchable windows (442) over all portions of at least one of said first and second metal layers (410, 412) sought to be removed in a predetermined customization configuration, prior to etching.
Claim 13
Dependent Claim
59 words
A technique according to any of claims 4 - 7 and also comprising the step of forming an etch resistant layer (440) over said integrated circuit blank using an etchable window mask which defines etchable windows (442) over all portions of said at least one metal layer sought to be removed in a predetermined customization configuration, prior to etching.
Claim 14
Dependent Claim
62 words
A technique according to any of claims 1 - 3 and also comprising the step of forming an etch resistant layer (440) over said integrated circuit blank using an etchable window mask to define etchable windows (442) over portions of at least one of said first and second metal layers which could be removed in a predetermined customization configuration, prior to etching.
Claim 15
Dependent Claim
58 words
A technique according to any of claims 4 - 7 and also comprising the step of forming an etch resistant layer (440) over said integrated circuit blank using an etchable window mask to define etchable windows (442) over portions of said at least one metal layer which could be removed in a predetermined customization configuration, prior to etching.
Claim 16
Dependent Claim
35 words
A technique according to any of claims 8, 10 and 12 and wherein said step of forming an etch resistant layer (440) comprises the step of forming an insulating layer over said first metal layer.
Claim 17
Dependent Claim
37 words
A technique according to any of claims 9, 11 and 13 and wherein said step of forming an etch resistant layer (440) comprises the step of forming an insulating layer over said at least one metal layer.
Claim 18
Dependent Claim
39 words
A technique according to any of claims 8, 10, 12 and 14 and wherein said step of forming an etch resistant layer (440) also comprises the step of forming a photoresist layer over at least said second metal layer.
Claim 19
Dependent Claim
39 words
A technique according to any of claims 9, 11, 13 and 15 and wherein said step of forming an etch resistant layer (440) also comprises the step of forming a photoresist layer over said at least one metal layer.
Claim 20
Dependent Claim
63 words
A technique according to claim 2 or claim 3 and wherein said simultaneous etching step comprises the step of etching said at least first and second metal layers (410, 412) a second time to customize said integrated circuit balnk by selectable removal of said at least first and second metal layers (410, 412) at selected ones of said portions arranged for selectable removal.
Claim 21
Dependent Claim
30 words
A technique according to any of the preceding claims and wherein said etching step for customizing said integrated circuit balnk comprises the step of generating at least one customizing mask.
Claim 22
Dependent Claim
28 words
20 A technique according to claim 19 and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of a mask material.
Claim 23
Dependent Claim
52 words
A technique according to claim 12 or claim 13 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of said etchable window mask.
Claim 24
Dependent Claim
19 words
A technique according to any of claims 8 - 17 and wherein said etch resistant layer (440) comprises photoresist.
Claim 25
Dependent Claim
53 words
A technique according to claim 12 or claim 13 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of ion beam irradiation of said etchable window mask.
Claim 26
Dependent Claim
39 words
A technique according to any of claims 1 - 3, 8, 10, 12, 14, 16 and 18 wherein said first metal layer (410) is a metal I layer and said second metal layer (412) is a metal II layer.
Claim 27
Dependent Claim
60 words
A technique for production of customised integrated circuits comprising the steps of: providing an integrated circuit blank by providing a first photoresist layer (440) over a metal layer (410) on a substrate (420) and etching said metal layer (410) through exposed locations (438) in said first photoresist layer (400): and providing a second photoresist layer over said etched metal layer.
Claim 28
Dependent Claim
60 words
A technique for production of customised integrated circuits comprising the steps of: providing an integrated circuit blank by providing a first photoresist layer (440) over a metal layer (410) on a substrate (420) and etching said metal layer (410) through exposed locations (438) in said first photoresist layer (400): and providing a second photoresist layer over said etched metal layer.
Claim 29
Dependent Claim
15 words
An integrated circuit formed in accordance with the technique of any of the preceding claims.
Claim 30
Dependent Claim
15 words
A semiconductor circuit formed in accordance with the technique of any of the preceding claims.
Claim 31
Dependent Claim
29 words
A semiconductor device comprising a blank including at least first and second metal layers (410, 412) including portions arranged for selectable removal to provide desired customization of said blank.
Claim 32
Dependent Claim
29 words
A semiconductor device comprising a blank including at least first and second metal layers (410, 412) including portions arranged for selectable removal to provide desired customization of said blank.
Claim 33
Dependent Claim
49 words
A semiconductor device according to claim 28 and also comprising an etch resistant layer (440) formed over at least said first metal layer and having formed therein windows located over all portions of said at least said first metal layer sought to be removed in a predetermined customization configuration.
Claim 34
Dependent Claim
34 words
A semiconductor device according to either of claims 28 and 29 and wherein said first metal layer (410) is a metal I layer and said second metal layer (412) is a metal II layer.
Claim 35
Dependent Claim
41 words
A technique according to any of claims 1 - 3, 8, 10, 12, 14, 16 and 18 and also including, prior to etching, the step of providing a photoresist layer which contacts locations on both said first and second metal layers.
References Cited (Backward Citations)
EP0124358A2
Cited
EP0210397A1
Cited
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