EP0124358A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for disconnecting interconnection using focused ion beam
Assignee: Toshiba Corp
•
Filing: 1984-04-26
•
Granted: —
•
Expires: 2004-04-26
Abstract
Abstract A method of disconnecting an interconnection (43) using a focused ion beam. A portion to be disconnected of an interconnection formed on a semiconductor substrate (41) to connect semiconductor elements formed in the substrate is aligned with an ion beam irradiating location, and a focused ion beam generated from a focused ion beam source is irradiated onto the interconnection to etch the interconnection by sputtering so that the interconnection is disconnected.
Inventors
- 👤 Tadahiro C/O Patent Division Takigawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 20:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of disconnecting an interconnection using a focused ion beam characterized by comprising the steps of: (A) aligning a portion to be disconnected of an interconnection (43) formed on a semiconductor substrate (41) to connect semiconductor elements formed in the substrate with an ion beam irradiating location; and (B) irradiating a focused ion beam generated from a focused ion beam source onto'the portion of the interconnection to etch the interconnection by sputtering, thereby disconnecting the interconnection.
Claim 2
Independent Claim
77 words
A method of disconnecting an interconnection using a focused ion beam characterized by comprising the steps of: (A) aligning a portion to be disconnected of an interconnection (43) formed on a semiconductor substrate (41) to connect semiconductor elements formed in the substrate with an ion beam irradiating location; and (B) irradiating a focused ion beam generated from a focused ion beam source onto'the portion of the interconnection to etch the interconnection by sputtering, thereby disconnecting the interconnection.
Claim 3
Dependent Claim
79 words
A method according to claim 1, characterized in that the step (A) includes the steps of: (al) irradiating said focused ion beam to the semiconductor substrate to determine the relative locational relationship between the portion to be disconnected of the interconnection and the ion beam source, and obtain location data of the interconnection to be disconnected; and (a2) aligning the portion to be disconnected of the interconnection with the ion beam irradiating location in accordance with the location data.
Claim 4
Dependent Claim
45 words
A method according to claim 2, characterized in that the semiconductor substrate in the step (al) is covered by an insulating film (44) and the focused ion beam is irradiated onto the insulating film, to obtain the location data of the interconnection to be disconnected.
Claim 5
Dependent Claim
16 words
A method according to claim 3, characterized in that the insulating film is a passivation film.
Claim 6
Dependent Claim
109 words
A method according to claim 1, characterized in that . the step (A) includes the steps of: (all) obtaining the location data of the interconnection to be disconnected on the semiconductor substrate by using a tester; (a12) loading the semiconductor substrate onto a table of a focused ion beam apparatus; (a13) detecting locations of reference marks on the semiconductor substrate using the focused ion beam to determine the relative locational relationship between the focused ion beam and the semiconductor substrate; and (a14) moving the table according to the location data of the interconnection to be disconnected to align the portion to be disconnected with the ion beam irradiating location.
Claim 7
Dependent Claim
33 words
A method according to claim 1, characterized in that in the step (B), the interconnection is covered by an insulating film, and the focused ion beam is irradiated from over the insulating film.
Claim 8
Dependent Claim
16 words
A method according to claim 6, characterized in that the insulating film is a passivation film.
Claim 9
Dependent Claim
56 words
A method according to claim 1, characterized in that the interconnection etching state is detected by identifying the particles scattered due to the irradiation of the focused ion beam during disconnection of the interconnection, and that the focused ion beam is turned off after confirming the state in which scattering of the particles no longer occur.
Claim 10
Dependent Claim
20 words
A method according to claim 8, characterized in that the step (C) is executed by a secondary ion mass analyzer.
Claim 11
Dependent Claim
19 words
A method according to claim 8, characterized in that the step (C) is executed by an Auger electron analyzer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.