Method of manufacturing a field-effect-controllable bipolar transistor

Abstract

Abstract Field-effect-controllable bipolar transistors (IGBT) have a reverse recovery charge which produces a so-called tail current on switching off. For the same forward characteristic, the reverse recovery charge can be drastically reduced if the anode zone (15) has a thickness of less than 1 mu m, if it is doped with implanted ions with a dose of 1x10<1><2> to 1x10<1><5> cm<-><2>, and if the lifetime of the minority charge carriers in the inner zone is at least 10 mu s. <IMAGE>

Inventors

• 👤 Gerhard Dr. Miller
• 👤 Helmut Dr. Strack
• 👤 Jenö Dr. Tihanyi

Bibliographic Details