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EP0325877A1
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A semiconductor substrate having a superconducting thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-12-26
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Granted: —
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Expires: 2008-12-26
Abstract
Abstract A semiconductor substrate comprising a single crystal substrate base such as silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln₁Ba₂Cu₃O 7-δ (Ln is lanthanide).
Inventors
- 👤 Hideo Itozaki
- 👤 Keizo Harada
- 👤 Naoji Fujimori
- 👤 Shuji Yazu
- 👤 Tetsuji Jodai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 21:30
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
39 words
A semiconductor substrate comprising a substrate base composed of a single crystal of semiconductor material and a superconducting thin film layer deposited on said substrate base, characterized in that said superconducting thin film is composed mainly of compound oxide.
Claim 2
Dependent Claim
39 words
A semiconductor substrate comprising a substrate base composed of a single crystal of semiconductor material and a superconducting thin film layer deposited on said substrate base, characterized in that said superconducting thin film is composed mainly of compound oxide.
Claim 3
Dependent Claim
35 words
A semiconductor substrate set forth in Claim 1, characterized in that said semiconductor material is selected from a group comprising Si, 3C-SiC, 6H-Sic, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.
Claim 4
Dependent Claim
28 words
A semiconductor substrate set forth in Claim 1 or 2, characterized in that a buffer layer is interposed between said semiconductor layer and said superconducting thin film layer.
Claim 5
Dependent Claim
18 words
A semiconducting substrate set forth in Claim 3, characterized in that said buffer layer is made of MgO.
Claim 6
Dependent Claim
76 words
A semiconductor substrate set forth in any one of Claim 1 to 4, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.
Claim 7
Dependent Claim
110 words
A semiconductor substrate set forth in Claim 5, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (α 1-x β x )γ y O z in which α, β and γ have the same definition as above, x is an atomic ratio of β with respect to (α+β) and has a range of 0.1 ≦ x ≦ 0.9, and y and z are respective atomic ratios with respect to (α 1-x β x ) which is considered to be equal to 1 and each satisfies ranges of 0.4 ≦ y ≦ 3.0 and 1 ≦ z ≦ 5 respectively.
Claim 8
Dependent Claim
40 words
A semiconductor substrate set forth in Claim 6, characterized in that said superconducting thin film layer is composed of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.
Claim 9
Dependent Claim
33 words
A semiconductor substrate set forth in Claim 6 or 7, characterized in that said superconducting thin film layer is composed of an oxide having perovskite typo or oxygen deficient perovskite type crystalline structure.
Claim 10
Dependent Claim
38 words
A semiconductor substrate set forth in any one of Claim 5 to 8, characterized in that said compound oxide contain further at least one elements selected from a group comprising Al, Fe, Co, Ni, Zn, Ag and Ti.
Claim 11
Dependent Claim
72 words
A semiconductor substrate set forth in Claim 5, characterized in that superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0 ≦ δ < 1.
Claim 12
Dependent Claim
19 words
A superconducting substrate set forth in Claim 10, characterized in that the Ln is Y, Er, Ho or Dy.
Claim 13
Dependent Claim
36 words
A superconducting substrate set forth in Claim 10 or 11, characterized in that said compound oxide contain further at least one of element selected from a group comprising Al, Fe, Co, Ni, Zn, Ag and Ti.
Claim 14
Dependent Claim
122 words
A semiconductor substrate set forth in any one of Claim 1 to 4, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), q is a number which satisfies a range of 0 < q < 1, and r is a number which satisfies a range of -2 ≦ r ≦ + 2.
Claim 15
Dependent Claim
51 words
A process for depositing a superconducting thin film layer composed of compound oxide on a substrate of a single crystal of semiconductor material by vapour deposition technique, characterized in that said substrate of semiconductor material is heated at a temperature which is lower than 700 °C during the physical vapour deposition.
Claim 16
Dependent Claim
51 words
A process for depositing a superconducting thin film layer composed of compound oxide on a substrate of a single crystal of semiconductor material by vapour deposition technique, characterized in that said substrate of semiconductor material is heated at a temperature which is lower than 700 °C during the physical vapour deposition.
Claim 17
Dependent Claim
26 words
A process set forth in Claim 14, characterized in that said vapour deposition technique is sputtering, ion plating, molecular beam epitaxy or chemical vapour deposition technique.
Claim 18
Dependent Claim
27 words
A process set forth in Claim 15, characterized in that a buffer layer is deposited on said substrate base before said superconducting thin film layer is deposited.
Claim 19
Dependent Claim
17 words
A process set forth in Claim 16, characterized in that said buffer layer is composed of MgO.
Claim 20
Dependent Claim
39 words
A process set forth in any one of Claim 14 to 17, characterized in that said semiconductor material is selected from a group comprising Si, 3C-SiC, 6H-Sic, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.
Claim 21
Dependent Claim
74 words
A process set forth in any one of Claim 14 to 18, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa, VIIIa groups of the Periodic Table.
Claim 22
Dependent Claim
40 words
A process set forth in Claim 19, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.
Claim 23
Dependent Claim
72 words
A process set forth in Claim 19, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0 ≦ δ < 1.
Claim 24
Dependent Claim
121 words
A process set forth in any on of Claim 14 to 18, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), q is a number which satisfies a range of 0 < q < l, and r is a number which satisfies a range of -2 ≦ r ≦ + 2.
References Cited (Backward Citations)
EP0282012A2
Cited
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