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EP0282012A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Superconducting semiconductor device

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1988-03-08
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Granted: —
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Expires: 2008-03-08
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Abstract

Abstract The present invention relates to a manufacturing method for a semiconductor device using a superconducting ceramic material, and more particularly to a manufacturing method for a semiconductor device wherein one part or all of the connecting wiring in the semiconductor device is formed from a superconducting ceramic material and wherein the semiconductor device can be activated at a low temperature such as 70 °K to 100 °K, or ideally 77 °K. The semiconductor of the present invention comprises a semiconductor substrate with at least one element provided within this semiconductor substrate and a superconducting material with zero electrical resistance formed on this substrate or on the upper surface of the insulating film or on the conductor with the superconducting material being selectively etched and patterning being performed on the substrate.

Inventors

  • 👤 Shunpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-31 03:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; H10N; H10N60/00; H10N60/80; H10N60/85; H10N60/855; H10N60/857

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 31 words
A superconducting semiconductor device comprising a semiconductor substrate, at least one semiconductor element provided within the substrate, and a connecting wiring provided on the substrate and formed from a superconducting material.
Claim 2
Dependent Claim 31 words
A superconducting semiconductor device comprising a semiconductor substrate, at least one semiconductor element provided within the substrate, and a connecting wiring provided on the substrate and formed from a superconducting material.
Claim 3
Dependent Claim 31 words
The superconducting semiconductor device of claim 1, wherein the connecting wiring is used to connect the semiconductor element to at least one of input and output terminals for external electrical signals.
Claim 4
Dependent Claim 20 words
The superconducting semiconductor device of claim 1, wherein the connecting wiring is used to connect one semiconductor element to another.
Claim 5
Dependent Claim 17 words
The superconducting semiconductor device of claim 1, wherein the superconducting material is made of a ceramic material.
Claim 6
Dependent Claim 17 words
The superconducting semiconductor device of claim 1, wherein the semiconductor substrate is a single crystalline silicon semiconductor.
Claim 7
Dependent Claim 26 words
The superconducting semiconductor device of claim 1, wherein a plurality of semiconductor elements are formed in a region of the substrate having a III-V compound semiconductor.
Claim 8
Dependent Claim 15 words
The superconducting semiconductor device of claim 4, wherein the ceramic material includes copper and oxygen.
Claim 9
Independent Claim 37 words
A method of producing a superconducting semiconductor device comprising the steps of providing a semiconductor substrate, providing at least one semiconductor element within the substrate, and providing a connecting wiring of a superconducting material on the substrate.
Claim 10
Independent Claim 37 words
A method of producing a superconducting semiconductor device comprising the steps of providing a semiconductor substrate, providing at least one semiconductor element within the substrate, and providing a connecting wiring of a superconducting material on the substrate.

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