EP0299244A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Processing apparatus and method
Assignee: Texas Instruments Inc
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Filing: 1988-06-23
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Granted: —
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Expires: 2008-06-23
Abstract
Abstract A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.
Inventors
- 👤 Cecil J Davis
- 👤 Lee M. Loewenstein
- 👤 Rhett B. Jucha
- 👤 Robert T. Matthews
- 👤 Randall C. Hildenbrand
- 👤 Dean W. Freeman
- 👤 John I. Jones
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 17:35
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482; C23C16/50; C23C16/517; C23C16/54
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
71 words
An apparatus for processing a workpiece, comprising (a) a first chamber having a workpiece support disposed therein capable of supporting a workpiece; (b) a second chamber remote from and in fluid communication with said first chamber for generating activated species; (c) a source of radiant heat coupled to the workpiece; (d) a third chamber for generating ultraviolet light within said first chamber and adjacent said second chamber for illuminating said workpiece.
Claim 2
Independent Claim
71 words
An apparatus for processing a workpiece, comprising (a) a first chamber having a workpiece support disposed therein capable of supporting a workpiece; (b) a second chamber remote from and in fluid communication with said first chamber for generating activated species; (c) a source of radiant heat coupled to the workpiece; (d) a third chamber for generating ultraviolet light within said first chamber and adjacent said second chamber for illuminating said workpiece.
Claim 3
Dependent Claim
18 words
The apparatus as set forth in claim 1 wherein workpiece has a face to be processed facing downward.
Claim 4
Dependent Claim
23 words
The apparatus as set forth in claim 1 wherein said third chamber is separated from and in fluid communication with the first chamber.
Claim 5
Dependent Claim
23 words
The apparatus as set forth in claim 1 wherein said second chamber is separated from said third chamber by a substantially transparent window.
Claim 6
Dependent Claim
17 words
The apparatus as set forth in claim 4 wherein said substantially transparent window is comprised of quartz.
Claim 7
Dependent Claim
17 words
The apparatus as set forth in claim 4 wherein said substantially transparent window is comprised of sapphire.
Claim 8
Dependent Claim
21 words
The apparatus as set forth in claim 1 wherein said second, third, and fourth chambers are separately controlled to operate singly.
Claim 9
Dependent Claim
21 words
The apparatus as set forth in claim 1 wherein said second, and chambers are separately controlled to operate in any combination.
Claim 10
Dependent Claim
17 words
The apparatus as set forth in claim 1 wherein said third chamber is located below said workpiece.
Claim 11
Dependent Claim
22 words
The apparatus as set forth in claim 1 wherein said second chamber has said pair of electrodes above and below said workpiece.
Claim 12
Dependent Claim
14 words
The apparatus as set forth in claim 1 wherein the workpiece is a wafer.
Claim 13
Independent Claim
116 words
A method of processing wafers comprising; (a) transferring a wafer into a process chamber; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) providing a first gas to a plasma generating module separated from said chamber and producing a remote plasma; (d) to said remote plasma; (e) illuminating a frontside of the wafer with ultraviolet energy from an ultraviolet energy source within said vacuum chamber separate from the wafer; (f) illuminating a backside of the wafer with a source of radiant energy; (g) supplying an additional process gas; and (h) flowing the remote plasma and the additional process gas over said wafer disposed within said chamber.
Claim 14
Independent Claim
116 words
A method of processing wafers comprising; (a) transferring a wafer into a process chamber; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) providing a first gas to a plasma generating module separated from said chamber and producing a remote plasma; (d) to said remote plasma; (e) illuminating a frontside of the wafer with ultraviolet energy from an ultraviolet energy source within said vacuum chamber separate from the wafer; (f) illuminating a backside of the wafer with a source of radiant energy; (g) supplying an additional process gas; and (h) flowing the remote plasma and the additional process gas over said wafer disposed within said chamber.
References Cited (Backward Citations)
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