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EP0254654B1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of chemical vapor deposition

Assignee: Ulvac Inc
•
Filing: 1987-07-21
•
Granted: 1993-10-06
•
Expires: 2007-07-21
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Abstract

No abstract record available.

Inventors

  • 👤 Izumi Nakayama
  • 👤 Akitoshi Suzuki
  • 👤 Yoshiro Kusumoto
  • 👤 Kazuo Takakuwa
  • 👤 Tetsuya Ikuta

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 04:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/48; C23C16/481

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 174 words
A method of forming a thin film on a substantially flat substrate by chemical vapor deposition comprising the steps of feeding into a reaction chamber (1) a first reactive gas containing a metal element and a second reactive gas containing no metal element, both in a laminar flow condition substantially parallel to and along the surface of the flat substrate (3) disposed in said reaction chamber (1) under reduced pressure, feeding an inert gas or a gas containing the inert gas as a main component downwardly so as to cross substantially perpendicularly to the flows of the first and second reactive gases and to maintain the laminar flow condition of the first and second reactive gases, and radiating a light beam from at least one heating lamp (8) to the substrate in the reaction chamber (1) to heat the substrate (3) and thus produce chemical reaction on the surface of the substrate (3), characterized in that a thin film containing the metal element is grown along a substantially flat surface of the substrate (3).
Claim 2
Dependent Claim 33 words
A method according to claim 1, characterized in that said first reactive gas is any one or more selected from metallic halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆, AlCl₃.
Claim 3
Dependent Claim 24 words
A method according to claim 1, characterized in that said second reactive gas is any one or more selected from SiH₄, H₂, and SiH₂Cl₂.
Claim 4
Dependent Claim 27 words
A method according to claim 1, characterized in that said first reactive gas is injected with a mixture of an inert gas into the reaction chamber (1).
Claim 5
Dependent Claim 27 words
A method according to claim 1, characterized in that said second reactive gas is injected with a mixture of an inert gas into the reaction chamber (1).
Claim 6
Dependent Claim 38 words
A method according to claim 1, characterized in that said reaction chamber (1) is supplied with an inert gas for preventing a reactive product from being adhered to the portions of said reaction chamber other than the substrate.
Claim 7
Dependent Claim 21 words
A method according to claim 1, characterized in that said substrate is made of anyone of Si, SiO₂, Al₂O₃, glass, sapphire.

References Cited (Backward Citations)

EP0030798A1 Cited
EP0251764A2 Cited
EP0252667A2 Cited

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