EP0254654B1
Expired / Lapsed
EP
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Method of chemical vapor deposition
Assignee: Ulvac Inc
•
Filing: 1987-07-21
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Granted: 1993-10-06
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Expires: 2007-07-21
Abstract
No abstract record available.
Inventors
- 👤 Izumi Nakayama
- 👤 Akitoshi Suzuki
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/48; C23C16/481
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
174 words
A method of forming a thin film on a substantially flat substrate by chemical vapor deposition comprising the steps of feeding into a reaction chamber (1) a first reactive gas containing a metal element and a second reactive gas containing no metal element, both in a laminar flow condition substantially parallel to and along the surface of the flat substrate (3) disposed in said reaction chamber (1) under reduced pressure, feeding an inert gas or a gas containing the inert gas as a main component downwardly so as to cross substantially perpendicularly to the flows of the first and second reactive gases and to maintain the laminar flow condition of the first and second reactive gases, and radiating a light beam from at least one heating lamp (8) to the substrate in the reaction chamber (1) to heat the substrate (3) and thus produce chemical reaction on the surface of the substrate (3), characterized in that a thin film containing the metal element is grown along a substantially flat surface of the substrate (3).
Claim 2
Dependent Claim
33 words
A method according to claim 1, characterized in that said first reactive gas is any one or more selected from metallic halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆, AlCl₃.
Claim 3
Dependent Claim
24 words
A method according to claim 1, characterized in that said second reactive gas is any one or more selected from SiH₄, H₂, and SiH₂Cl₂.
Claim 4
Dependent Claim
27 words
A method according to claim 1, characterized in that said first reactive gas is injected with a mixture of an inert gas into the reaction chamber (1).
Claim 5
Dependent Claim
27 words
A method according to claim 1, characterized in that said second reactive gas is injected with a mixture of an inert gas into the reaction chamber (1).
Claim 6
Dependent Claim
38 words
A method according to claim 1, characterized in that said reaction chamber (1) is supplied with an inert gas for preventing a reactive product from being adhered to the portions of said reaction chamber other than the substrate.
Claim 7
Dependent Claim
21 words
A method according to claim 1, characterized in that said substrate is made of anyone of Si, SiO₂, Al₂O₃, glass, sapphire.
References Cited (Backward Citations)
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