EP0251764A2
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EP
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Chemical vapour deposition methods and apparatus
Assignee: Ulvac Inc
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Filing: 1987-06-30
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Granted: —
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Expires: 2007-06-30
Abstract
Abstract In a CVD method, a wafer (3) is retained on a wafer holder (2) in a reaction tank or chamber (1) to be put under reduced pressure. At least one through hole is made in an insulating film formed on a substrate of the wafer (3) and a first metallic film is formed in the through hole. A gas containing a metallic element, such as WF₆, and a reduction gas such as H₂ are introduced into the reaction chamber (1) under reduced pressure through inlets (4 a , 4 b ). Radiation from a heating lamp (8) is directed on to the wafer (3) so that a temperature difference arises between the insulating film and the first metallic film, as a result of differences of absorption rates of the radiation between the insulating film, the substrate and the first metallic film. Accordingly, a chemical reaction is effected only on the first metalic film, so that a second metallic film of the metallic element is formed on the first metallic film. The metallic element containing gas and the reduction gas may be introduced in a sheet-like manner substantially parallel to the surface of the wafer (3) by shaping the inlets (4 a , 4 b ) so that their width is much less than their length. An inert gas or a gas containing mainly inert gas is introduced through a perforated plate (6 a ) towards the surface of the wafer (3) so that the reaction gases maintain laminar flow (R, Rʹ).
Inventors
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
- 👤 Akitoshi Suzuki
- 👤 Izumi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:44
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/45504; C23C16/04; C23C16/045; C23C16/45519; C23C16/45563; C23C16/48; C23C16/481; Y; Y10; Y10S; Y10S427/00; Y10S427/101
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
180 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9 a ) being made in an insulating film (9) formed on a substrate (3 a ) of said wafer (3) and a first metallic film (10) being formed in said through hole (9 a ); introducing a gas containing a metallic element and a reduction gas into said reaction chamber (1) under reduced pressure; and directing radiation from a heating source (8) on to said wafer (3) so as to provide a temperature difference between said insulating film (9) and said first metallic film (10), utilising differences in absorption rates of said radiation between said insulating film (9), said substrate (3 a ) and said first metallic film (10) so that a chemical reaction is effected substantially only on said first metallic film (10), and a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 2
Dependent Claim
180 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9 a ) being made in an insulating film (9) formed on a substrate (3 a ) of said wafer (3) and a first metallic film (10) being formed in said through hole (9 a ); introducing a gas containing a metallic element and a reduction gas into said reaction chamber (1) under reduced pressure; and directing radiation from a heating source (8) on to said wafer (3) so as to provide a temperature difference between said insulating film (9) and said first metallic film (10), utilising differences in absorption rates of said radiation between said insulating film (9), said substrate (3 a ) and said first metallic film (10) so that a chemical reaction is effected substantially only on said first metallic film (10), and a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said heating source is an infrared lamp (8).
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein radiation components of wavelength 0.75 to 5µm are most intensive in the radiation from said infrared lamp (8).
Claim 5
Dependent Claim
44 words
A method according to claim 1 or claim 2, wherein optical filter means (16) is interposed between said heating source (15) and said wafer (3) so that radiation components of wavelength 0.75 to 5µm are most intensive in the radiation reaching said wafer (3).
Claim 6
Independent Claim
56 words
A method according to any one of the preceding claims, comprising the step of ejecting (Q) an inert gas or a gas containing mainly inert gas towards said wafer (3), the metallic element containing gas and the reduction gas being introduced, (R, Rʹ) in a sheet-like manner substantially parallel to the surface of the wafer (3).
Claim 7
Independent Claim
37 words
A method according to any one of the preceding claims, wherein said wafer holder (2ʹ) is transparent and the radiation from said heating source (8) is directed through said wafer holder (2ʹ) on to said wafer (3).
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein an inert gas is arranged to flow (17) between said heating source (8) and said wafer holder (2ʺ).
Claim 9
Dependent Claim
147 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9 a ) being made in an insulating film (9) formed on a substrate (3 a ) of said wafer (3) and a first metallic film (10) being formed in said through hole (9 a ); introducing a gas containing a metallic element and a reduction gas in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing a gas that at least substantially includes an inert gas towards the surface of said wafer (3); and heating said wafer (3) so that a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 10
Dependent Claim
147 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9 a ) being made in an insulating film (9) formed on a substrate (3 a ) of said wafer (3) and a first metallic film (10) being formed in said through hole (9 a ); introducing a gas containing a metallic element and a reduction gas in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing a gas that at least substantially includes an inert gas towards the surface of said wafer (3); and heating said wafer (3) so that a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 11
Independent Claim
32 words
A method according to any one of claims 1 to 8, wherein the metallic element of said first metallic film (10) is the same as that of said second metallic film (11).
Claim 12
Independent Claim
31 words
A method according to any one of claims 1 to 8, wherein the metallic element of said first metallic film (10) is different from that of said second metallic film (11).
Claim 13
Independent Claim
37 words
A method according to any one of the preceding claims, wherein said reduction gas is H₂, and said metallic element containing gas is one or more of WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆ and AlCl₃.
Claim 14
Independent Claim
38 words
A method according to any one of the preceding claims, wherein said insulating film (9) is one or more of SiO₂, Al₂O₃, oxides of BSG, PSG or BPSG, BN, SiN x , or SiN x O y .
Claim 15
Independent Claim
42 words
A method according to any one of claims 1 to 12, wherein said first metallic film (10) is one or more of W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni, or an alloy of two or more of the foregoing.
Claim 16
Independent Claim
38 words
A method according to any one of claims 1 to 12, wherein said first metallic film (10) is one or more of WSi x , TiSi x , TaSi x , MoSi x , PtSi x or TiN.
Claim 17
Independent Claim
29 words
A method according to any one of the preceding claims, wherein said substrate (3 a ) of the wafer (3) is made of Si, SiO₂, Al₂O₃, glass or sapphire.
Claim 18
Independent Claim
17 words
A method according to any one of the preceding claims, wherein said wafer holder (2) is rotated.
References Cited (Backward Citations)
No citation records indexed.
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