Patent US6383011B2 successfully refreshed from Google Patents.
EP0252667A2
Expired / Lapsed
EP
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Chemical vapour deposition methods
Assignee: Ulvac Inc
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Filing: 1987-06-30
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Granted: —
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Expires: 2007-06-30
Abstract
Abstract In a CVD method, a wafer (3) is retained on a wafer holder (2) in a reaction tank or chamber (1) to be put under reduced pressure. At least one through hole is made in an insulating film formed on a substrate of the wafer (3). A gas containing at least a metallic element is introduced into the reaction chamber (1) under reduced pressure so that a first metallic film of the metal element is formed on the substrate in the through hole of the insulating film of the wafer (3). This gas and a reduction gas are then introduced into the reaction chamber (1) under reduced pressure through inlets (4a, 4b) and radiation from a heating lamp (8) is directed on to the wafer (3) so that a temperature difference arises between the insulating film and the first metallic film, as a result of differences of absorption rates of the radiation between the insulating film, the substrate and the first metallic film. A chemical reaction is effected only on the first metallic film, and a second metallic film of the metal element is formed on the first metallic film. The metallic element containing gas may be introduced in a sheet-like manner substantially parallel to the surface of the wafer (3) by shaping the inlets (4a, 4b) so that their width is much less than their length. An inert gas or a gas containing mainly inert gas is introduced through a perforated plate (6a) towards the surface of the wafer (3) so that the reaction gases maintain laminar flow (R, R'). The metallic element containing gas and a reduction gas such as hydrogen are then introduced in a sheet-like manner substantially parallel to the surface of the wafer (3) into the reaction chamber (1) under reduced pressure, the at least substantially inert gas being introduced towards the surface of the wafer (3). The wafer (3) is heated so that a second metallic film of the metal element is formed on the first metallic film.
Inventors
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
- 👤 Akitoshi Suzuki
- 👤 Izumi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:35
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/06; C23C16/08; C23C16/14; C23C16/45519; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
201 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9ª) being made in an insulating film (9) formed on a substrate (3ª) of said wafer (3); introducing a gas containing a metallic element into said reaction chamber (1) under reduced pressure so that a first metallic film (10) of said metallic element is formed on said substrate (3ª) in said through hole (9ª) of the insulating film (9) of the wafer (3); introducing said gas and a reduction gas into said reaction chamber (1) under reduced pressure; and directing radiation from a heating source (8) on to said wafer (3) so as to provide a temperature difference between said insulating film (9) and said first metallic film (10), utilising differences in absorption rates of said radiation between said insulating film (9), said substrate (3ª) and said first metallic film (10) so that a chemical reaction is effected substantially only on said first metallic film (10), and a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 2
Dependent Claim
201 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9ª) being made in an insulating film (9) formed on a substrate (3ª) of said wafer (3); introducing a gas containing a metallic element into said reaction chamber (1) under reduced pressure so that a first metallic film (10) of said metallic element is formed on said substrate (3ª) in said through hole (9ª) of the insulating film (9) of the wafer (3); introducing said gas and a reduction gas into said reaction chamber (1) under reduced pressure; and directing radiation from a heating source (8) on to said wafer (3) so as to provide a temperature difference between said insulating film (9) and said first metallic film (10), utilising differences in absorption rates of said radiation between said insulating film (9), said substrate (3ª) and said first metallic film (10) so that a chemical reaction is effected substantially only on said first metallic film (10), and a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said heating source is an infrared lamp (8).
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein radiation components of wavelength 0.75 to 5µm are most intensive in the radiation from said infrared lamp (8).
Claim 5
Dependent Claim
44 words
A method according to claim 1 or claim 2, wherein optical filter means (16) is interposed between said heating source (15) and said wafer (3) so that radiation components of wavelength 0.75 to 5µm are most intensive in the radiation reaching said wafer (3).
Claim 6
Independent Claim
56 words
A method according to any one of the preceding claims, comprising the step of ejecting (Q) an inert gas or a gas containing mainly inert gas towards said wafer (3), the metallic element containing gas and the reduction gas being introduced (R, Rʹ) in a sheet-like manner substantially parallel to the surface of the wafer (3).
Claim 7
Independent Claim
37 words
A method according to any one of the preceding claims, wherein said wafer holder (2ʹ) is transparent and the radiation from said heating source (8) is directed through said wafer holder (2ʹ) on to said wafer (3).
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein an inert gas is arranged to flow (17) between said heating source (8) and said wafer holder (2ʺ).
Claim 9
Dependent Claim
204 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9ª) being made in an insulating film (9) formed on a substrate (3ª) of said wafer (3); introducing a gas containing a metallic element in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing a gas that at least substantially includes an inert gas towards the surface of said wafer (3); heating said wafer (3) so that a first metallic film (10) of said metallic element is formed on said substrate (3ª) in said through hole (9ª) of the insulating film (9) of the wafer (3); introducing said metallic element containing gas and a reduction gas in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing the at least substantially inert gas towards the surface of said wafer (3); and heating said wafer (3) so that a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 10
Dependent Claim
204 words
A chemical vapour deposition method comprising the steps of: retaining a wafer (3) on a wafer holder (2) in a reaction chamber (1) which is to be subjected to a reduced pressure, at least one through hole (9ª) being made in an insulating film (9) formed on a substrate (3ª) of said wafer (3); introducing a gas containing a metallic element in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing a gas that at least substantially includes an inert gas towards the surface of said wafer (3); heating said wafer (3) so that a first metallic film (10) of said metallic element is formed on said substrate (3ª) in said through hole (9ª) of the insulating film (9) of the wafer (3); introducing said metallic element containing gas and a reduction gas in a sheet-like manner substantially parallel to the surface of said wafer (3) into said reaction chamber (1) under reduced pressure; introducing the at least substantially inert gas towards the surface of said wafer (3); and heating said wafer (3) so that a second metallic film (11) of said metallic element is formed on said first metallic film (10).
Claim 11
Independent Claim
36 words
A method according to any one of the preceding claims, wherein said reduction gas is H₂, and said metallic element containing gas is one or more of WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, WCl₆ and AlCl₃.
Claim 12
Independent Claim
38 words
A method according to any one of the preceding claims, wherein said insulating film (9) is one or more of SiO₂, Al₂O₃, oxides of BSG, PSG or BPSG, BN, SiN x , or SiN x O y .
Claim 13
Independent Claim
37 words
A method according to any one of the preceding claims, wherein said second metallic film (11) is one or more of W, Mo, Ta, Cr, Ti, Al or an alloy of two or more of the foregoing.
Claim 14
Independent Claim
37 words
A method according to any one of the preceding claims, wherein said substrate (3ª) of the wafer (3) is made of silicon, and at least a portion of the silicon is exposed in said through hole (9ª).
Claim 15
Independent Claim
29 words
A method according to any one of the preceding claims, wherein a silicon film (14) is formed as an uppermost layer in said substrate (3ª) of the wafer (3).
Claim 16
Independent Claim
17 words
A method according to any one of the preceding claims, wherein said wafer holder (2) is rotated.
References Cited (Backward Citations)
No citation records indexed.
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